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resistion
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re: Hynix, Toshiba team up on MRAM
resistion   7/13/2011 3:17:02 PM
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MRAM's main selling point is endurance, but that hasn't been enough to get a big market. DRAM still much cheaper. Or maybe the replacement cycle is too long?

chanj0
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re: Hynix, Toshiba team up on MRAM
chanj0   7/13/2011 4:09:21 PM
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MRAM is non-volatile memory. It is an alternative to Flash memory and potentially a replacement of Flash memory.

resistion
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re: Hynix, Toshiba team up on MRAM
resistion   7/13/2011 8:43:31 PM
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Hynix has considered MRAM as potential nonvolatile DRAM. But MRAM has been around for a while. I think it's considered too costly compared to DRAM, but would have thought many would consider worth it.

KB3001
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re: Hynix, Toshiba team up on MRAM
KB3001   7/14/2011 2:54:09 PM
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If it offers an order of magnitude improvement in speed and power consumption at reasonable density levels, things could change quickly with the economies of scale of the mobile market.

pixies
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re: Hynix, Toshiba team up on MRAM
pixies   7/13/2011 6:35:00 PM
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People have been talking about and working on MRAMs for almost 20 years, where are the products?

Peter Clarke
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re: Hynix, Toshiba team up on MRAM
Peter Clarke   7/13/2011 7:24:25 PM
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@pixies Everspin (www.everspin.com) has got a product line card that goes from 256-kbit up to 16-Mbit.

BLinder
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re: Hynix, Toshiba team up on MRAM
BLinder   7/13/2011 10:41:59 PM
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Technology, materials, process knowledge improves over time and a revival of MRAM technology (more than current suppliers) with spin-transfer torque magneto-resistance would be welcomed in the market. But let's give the DRAM and Flash technology a big applause since these two technologies have carried the ball for many years.

DrFPGA
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re: Hynix, Toshiba team up on MRAM
DrFPGA   7/14/2011 7:11:00 PM
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Will perpendicular MJT have better scaling characteristics than other approaches? Can it be implemented with multiple layers and multiple bits per cell? These are the types of things I'd be interested in reading about.

resistion
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re: Hynix, Toshiba team up on MRAM
resistion   7/15/2011 5:51:06 AM
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They're trying to distinguish a subtle difference of two different tunneling barriers. That will be hard to do as you scale down since tunneling is still a random process.

Kinnar
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re: Hynix, Toshiba team up on MRAM
Kinnar   7/17/2011 9:30:53 AM
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If it goes all the mobile devices using MRAM needs to be given special protection against magnetic fields. Otherwise they will loose their data in the vicinity of the strong magnetic field.

resistion
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re: Hynix, Toshiba team up on MRAM
resistion   7/19/2011 4:12:28 PM
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Yes, and some smartphones with built-in compass or magnetic strap holders pose this problem.

resistion
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re: Hynix, Toshiba team up on MRAM
resistion   7/19/2011 4:20:25 PM
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Since Toshiba doesn't make DRAM (or want to play in that market either) and it is highly unlikely for MRAM to replace NAND or HDD, I wonder if Toshiba (and Hynix) are striving to create a new application for MRAM. It seems hard to do without a customer, or when most customers are accustomed to just Flash and DRAM.



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As data rates begin to move beyond 25 Gbps channels, new problems arise. Getting to 50 Gbps channels might not be possible with the traditional NRZ (2-level) signaling. PAM4 lets data rates double with only a small increase in channel bandwidth by sending two bits per symbol. But, it brings new measurement and analysis problems. Signal integrity sage Ransom Stephens will explain how PAM4 differs from NRZ and what to expect in design, measurement, and signal analysis.

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