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double-o-nothing
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re: IEDM: Hynix takes NAND to 15-nm
double-o-nothing   12/28/2011 3:28:21 PM
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If Hynix and now Samsung got the 15 nm QPT process going, they have to reduce the cost of it by taking it to the low teens or even 10 nm.

xprmntl
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re: IEDM: Hynix takes NAND to 15-nm
xprmntl   9/29/2011 8:49:38 PM
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Hynix sponsored research on AgInSbTe http://iopscience.iop.org/0957-4484/21/2/025703;jsessionid=3CF12AAD9D94626CAB0D2E3790A75A60.c1

xprmntl
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re: IEDM: Hynix takes NAND to 15-nm
xprmntl   9/29/2011 8:37:00 PM
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There are quite a few companies that use As (arsenic) in semiconductor devices. Market research indicates that the GaAs market was projected at $5.2B for 2011, see: http://www.eetimes.com/electronics-news/4212649/Gallium-arsenide-on-a-roll--says-analyst ZnSe is a common in blue and white light-emitting diodes and diode lasers.

double-o-nothing
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re: IEDM: Hynix takes NAND to 15-nm
double-o-nothing   9/27/2011 11:53:03 AM
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Indeed, Google "Hynix qspt"

resistion
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re: IEDM: Hynix takes NAND to 15-nm
resistion   9/23/2011 11:03:25 PM
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Could Hynix be working on SiO2- doped GST?

Semyon Savransky
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re: IEDM: Hynix takes NAND to 15-nm
Semyon Savransky   9/21/2011 6:17:52 PM
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I don’t know how Hynix measure retention. PCM retention is a tricky issue – it is not enough conduct few experiments at elevated temperatures and then extrapolate your results to 10 years period. It seems that Politecnico di Milano group started to recognize the problem, so read their papers.

Semyon Savransky
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re: IEDM: Hynix takes NAND to 15-nm
Semyon Savransky   9/21/2011 6:09:12 PM
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Hynix mentioned AgLnSbTe in the paragraph 0006 of patent 2011/0193046A1 and AgInSbTe in the paragraph 0036 of the same patent. Because the patent is rather about cell than about material I think AgLnSbTe is typo. AgInSbTe is well-known phase-change alloy (PCA) but it cannot provide 200oC retention for 10 Years as far as I know. I do not recall any good PCA with rare-earth elements but my experience with such compositions are quite limited. The paper of good friend of my Sergey Kozyukhin cited in early comment is about basic properties. Chalcogenides with rare-earth elements are promising for optics but at least As2X3 (X = S, Se) with rare-earth elements studied in the paper would NOT make good PCM. The best PCA I used to work with has about 150oC retention for 10 Years, about 5 orders magnitude difference between high and low resistances, drift about 4X smaller than GST and good immunity for read disturb.

resistion
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re: IEDM: Hynix takes NAND to 15-nm
resistion   9/20/2011 1:43:21 AM
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These kinds of devices are interesting from academic viewpoint. But I don't know if any company would delve into such cocktails of exotic elements like As and Se.

rbtbob
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re: IEDM: Hynix takes NAND to 15-nm
rbtbob   9/19/2011 6:51:24 PM
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The following paper is the best I can get the Google to cough up. It has a graph that might be of interest: http://www.ntmdt.com/data/media/files/publications/2006/02.16_s.a._kozyukhin_e.n._english.pdf I believe there are much better papers in some of the material science publications, but the searches are best done using the specialized search engines of the paper houses from an institution with access rights. Maybe a university student will read this and do a search. I would think that Dr. Savransky could offer some insight on lanthanide doping, but he might not want to make any such disclosure.

R G.Neale
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re: IEDM: Hynix takes NAND to 15-nm
R G.Neale   9/19/2011 9:06:47 AM
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Rbtbob –Agreed, Indium does appear later in the patent. I also have spent time researching the literature on lanthanides without finding any great enlightenment. The use of silver in AgInSbTe is interesting, in my experience silver always promoted permanent crystallization in chalcogenides either by alloying, or possibly catalysis. I am sure you will find there is more in the literature on AgInSbTe and GeInSbTe. I think what is important for any potential PCM material composition is to establish the crystallization surface temperature as an overlay on the phase diagram (no small task). The peaks and troughs in that surface will at least allow some of the thermal consequences of element separation to be determined. Even more important is the degree to which element separation might even be tolerated. From data in the literature I have constructed that surface for a section of one important PCM composition, and I was hoping to be able to publish that in the near future. The idea is not new, when I was at Harris Semiconductor we looked at the PCM threshold voltage surface as a function of composition hoping that we could find a region where a slope could be found that would balance out the effects of electro-migration (element separation). We assumed, wrongly, that the result of electro-migration would be layers of material of different composition, recently IBM have shown this to be wrong as I discussed in one of my PCM Progress Reports here in EETimes.

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