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re: IEDM: Samsung to present 20nm planar process
wilber_xbox   9/25/2011 4:11:40 AM
thanks OtisD for the link.

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re: IEDM: Samsung to present 20nm planar process
OtisTD   9/22/2011 6:26:50 PM
With tri-gate and FinFETs the electrostatics are much better. Intel has several presentations on their web site showing the advantages they claim from tri-gate vs. bulk planar- which are generally accepted/acknowledged throughout the device community. Poke around here and see: Surprisingly (to me), I heard they will not present performance details at IEDM- I guess we can wait and hope for VLSI.

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re: IEDM: Samsung to present 20nm planar process
wilber_xbox   9/22/2011 4:45:22 PM
I understood that Intel is introducing FInFET at 22nm while the rest of the industry will wait for 14nm. WIll there be any advantage in terms of the performance that Intel will gain? The advantage of knowing the problems and getting to the solutions first is clear. Does anyone know the reason behind Intel's move to introduce FInFET at 22nm?

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re: IEDM: Samsung to present 20nm planar process
mcgrathdylan   9/22/2011 4:24:24 AM
Thanks for alerting us to this. We have taken corrective action. Apologies for the error.

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re: IEDM: Samsung to present 20nm planar process
RGRU   9/21/2011 9:54:42 PM
Mr. Clarke there is a portion of text missing after "Samsung could conceivably introduce a". There is a typo in "lead Intel has offer the rest of the industry". Offer should be over.

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