The memristor is a resistive component which conducts current both ways, a fundamental disadvantage vs. semiconductor devices. A crosspoint matrix of memristors is filled with backdoor paths. Some sort of diode function is required for row-column selection. No mention in these press releases of how that is done. Presumably they're just not disclosing their solution to this problem. Time will tell.
Yes, a claim of "Whatever the best in flash memory is, we'll be able to double that.", when he has no idea where FLASH will be in 2013, is falling into the old trap of comparing what you have in the labs, with the alternative in volume production.
A message for stockholders perhaps, not customers ?
I was surprised HP tried to tag this to the Leon Chua work in 1971 (based on charge and flux) - there is no technical basis for doing that, as HP's design has neither charge nor flux, but perhaps it was a ploy to protect against counter patent claims, and it talks-up share prices ?
Can anyone imagine the old HP placing bluff and bluster, ahead of facts ?
Atleast the statements sound really confident about the schedule. I do not think they have to release the complete roadmap to public now. If they can get it right I hope this will keep HP back on track.
If HP/Hynix can deliver on this promise it would truly be disruptive to the memory industry as we know it today. But given the sparse details about this technology, I take this announcement as more wishful thinking than a solid plan.
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