It’s in reality a great and helpful piece of info. I’m satisfied that you simply shared this useful information with us. Please stay us up to date like this. Thanks for sharing.we are http://www.oemcargps.com
Problem with FRAM is that it can't achieve equal or higher density than Memristors. We can use FRAM right now... through TI or Ramtron or who-ever. FRAM is cool but very expensive... and only available in low densities. 2012 is not the end of the world, it is maybe just the end of Flash? lol.
Go for it HP!! You can do it.
What good are memristors and other memory devices when the IT dept at my company will not allow me to send files bigger than 10MBytes through my email.
I think someone needs to invent and implement a "mem-IT" dept so I can send bigger files!
Platinum electrodes sandwiching titanium dioxide was an early manifestation of the RRAM/memristor. I am hearing that research groups have moved on to other contact materials and highly engineered stacks of metal-oxides layers. Clearly using fab friendly materials is one of the many things researchers are shooting for.
There are some schemes for dealing with the sneak paths, discussed in the literature.
Without a doubt, when implemented, this class of memory would have to be stacked in multiple layers, resulting in much less than 4F2.
But I think using Pt is an unattractive side of his memristor.
I asked Stan Williams about how they coped with bypass paths and whether there is a need for blocking diodes or access transistors (which would hurt the goal of 4F2) and he said they were not required - but would not say more.
I understand there are numerous access methods which get round this problem (pun) but I understand they add to complexity in the peripheral circuitry and sometimes in the matrix itself. So either way you hurt the goal of 4F2.