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re: Infineon to make power ICs on 300-mm wafers
pinhead1   10/13/2011 5:16:07 PM
I am not aware of any SiC or GaN 300mm wafer supply... In fact, I don't even think you can get 200mm substrates with those materials. I think you can grow SiC epi on a silicon substrate, but I doubt that is an efficient way to make power devices. I'm no expert in power, though.

Peter Clarke
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re: Infineon to make power ICs on 300-mm wafers
Peter Clarke   10/13/2011 8:34:10 AM
Yes this refers to silicon wafers. Although I am sure Infineon is working on silicon-carbide and gallium-nitride as well.

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re: Infineon to make power ICs on 300-mm wafers
resistion   10/13/2011 3:36:39 AM
Without it being mentioned, I guess these devices are still silicon, not SiC or GaN? Wafer thinning and warping is harder for lithography no doubt!

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re: Infineon to make power ICs on 300-mm wafers
goafrit   10/12/2011 9:35:23 PM
I do not see this rush to lower feature size. Does it truly matter?

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re: Infineon to make power ICs on 300-mm wafers
chanj0   10/12/2011 7:25:29 PM
If resistance is indeed lower and heat is dissipated more efficiently with same current capacity, it means the efficiency is higher. It sounds a great improvement to me. Any further information and insight?

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re: Infineon to make power ICs on 300-mm wafers
elctrnx_lyf   10/12/2011 5:12:00 PM
does the thin wafers will have same current capacity?

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