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pinhead1
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re: Infineon to make power ICs on 300-mm wafers
pinhead1   10/13/2011 5:16:07 PM
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I am not aware of any SiC or GaN 300mm wafer supply... In fact, I don't even think you can get 200mm substrates with those materials. I think you can grow SiC epi on a silicon substrate, but I doubt that is an efficient way to make power devices. I'm no expert in power, though.

Peter Clarke
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re: Infineon to make power ICs on 300-mm wafers
Peter Clarke   10/13/2011 8:34:10 AM
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Yes this refers to silicon wafers. Although I am sure Infineon is working on silicon-carbide and gallium-nitride as well.

resistion
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re: Infineon to make power ICs on 300-mm wafers
resistion   10/13/2011 3:36:39 AM
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Without it being mentioned, I guess these devices are still silicon, not SiC or GaN? Wafer thinning and warping is harder for lithography no doubt!

goafrit
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re: Infineon to make power ICs on 300-mm wafers
goafrit   10/12/2011 9:35:23 PM
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I do not see this rush to lower feature size. Does it truly matter?

chanj0
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re: Infineon to make power ICs on 300-mm wafers
chanj0   10/12/2011 7:25:29 PM
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If resistance is indeed lower and heat is dissipated more efficiently with same current capacity, it means the efficiency is higher. It sounds a great improvement to me. Any further information and insight?

elctrnx_lyf
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re: Infineon to make power ICs on 300-mm wafers
elctrnx_lyf   10/12/2011 5:12:00 PM
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does the thin wafers will have same current capacity?



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As data rates begin to move beyond 25 Gbps channels, new problems arise. Getting to 50 Gbps channels might not be possible with the traditional NRZ (2-level) signaling. PAM4 lets data rates double with only a small increase in channel bandwidth by sending two bits per symbol. But, it brings new measurement and analysis problems. Signal integrity sage Ransom Stephens will explain how PAM4 differs from NRZ and what to expect in design, measurement, and signal analysis.

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