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DrFPGA
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re: Intel, Micron offer 128-Gbit NAND flash memory
DrFPGA   7/26/2012 11:17:07 PM
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Well- here is a 1TByte SSD announcement from May, right on schedule. http://www.tomshardware.com/news/ocz-ssd-1tb-solid-state-drive-octane,15531.html Only $3K...

LarryM99
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re: Intel, Micron offer 128-Gbit NAND flash memory
LarryM99   12/7/2011 11:01:36 PM
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Just yesterday I heard a news story here in San Diego about Gordon, the new supercomputer at the local SD Supercomputer Center. It has a 9X speed increase over last year's speed champ due to the use of what were described as 'massive' SSD's for storage. It looks like it will soon be due for an upgrade... larrym

green_ee
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re: Intel, Micron offer 128-Gbit NAND flash memory
green_ee   12/6/2011 8:43:56 PM
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So I expect to see a 1TByte SSD for laptops in 2012

Peter Clarke
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re: Intel, Micron offer 128-Gbit NAND flash memory
Peter Clarke   12/6/2011 5:41:24 PM
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@palangga This is from Dan Snyder a PR manager at Intel: "The smaller cell size enabled by the 20nm litho using the planar cell structure and hi-k metal gate (HKMG) allowed us to double the monolithic die capacity of the previous 25nm generation, where 64Gb was the maximum capacity that could fit in standard memory packaging. The higher dielectric constant of the hi-k enabled the required coupling between the floating gate and the control gate on the 20nm based cell, so the use of HKMG was critical for the production of any capacity NAND on 20nm (both our 64Gb and 128Gb), so therefore HKMG played a critical role in enabling the increase in monolithic die capacity to 128Gb. To paraphrase -- Intel-Micron needed to use HKMG in the gate-stack to get the 20-nm process to work. So without HKMG they couldn't have done the shrink from 25-nm and got the doubled memory cell density.

palangga
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re: Intel, Micron offer 128-Gbit NAND flash memory
palangga   12/6/2011 4:26:23 PM
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Thanks, Peter. I suspect that both the HKMG and the new denser cells are advances in the technology, but not necessarily causal to each other.

Peter Clarke
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re: Intel, Micron offer 128-Gbit NAND flash memory
Peter Clarke   12/6/2011 3:55:56 PM
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I have no idea. But I will ask Intel and Micron on your behalf. Be prepared. They may say that this is all they wish to say on the topic except to people who are prepared to sign a non-disclosure agreement.

palangga
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re: Intel, Micron offer 128-Gbit NAND flash memory
palangga   12/6/2011 3:49:14 PM
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Please explain- how does using HKMG on the access transistors increase the density of the memory cell?



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As data rates begin to move beyond 25 Gbps channels, new problems arise. Getting to 50 Gbps channels might not be possible with the traditional NRZ (2-level) signaling. PAM4 lets data rates double with only a small increase in channel bandwidth by sending two bits per symbol. But, it brings new measurement and analysis problems. Signal integrity sage Ransom Stephens will explain how PAM4 differs from NRZ and what to expect in design, measurement, and signal analysis.

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