Embedded Systems Conference
Breaking News
Comments
Newest First | Oldest First | Threaded View
Peter Clarke
User Rank
Author
re: Intel, Micron on sub 20-nm and insatiable thirst for memory
Peter Clarke   4/20/2012 10:36:40 AM
NO RATINGS
Although, Intel did gain a lot of ferroelectric memory knowledge in their research with Thin Film Electronics a few years back. But I agree there is no sign they are using that knowledge directly in these NAND flash memories. The conventional wisdom is for companies to go to vertically stacked NAND memory cells thus keeping the same planar geometry (and electrons per bit) while getting greater memory denistry per die area.

cidbarca
User Rank
Author
re: Intel, Micron on sub 20-nm and insatiable thirst for memory
cidbarca   4/20/2012 7:17:08 AM
NO RATINGS
Thanks resistion, I think I see now. The high-k dielectric's polarization isn't used as a memory element at all. Is it correct to think of it as simply providing a capacitance threshold that's used as the limit on current flow?

resistion
User Rank
Author
re: Intel, Micron on sub 20-nm and insatiable thirst for memory
resistion   4/20/2012 2:25:11 AM
NO RATINGS
So far it's just floating gate with high k at 20 nm.

cidbarca
User Rank
Author
re: Intel, Micron on sub 20-nm and insatiable thirst for memory
cidbarca   4/19/2012 7:40:36 PM
NO RATINGS
If I'm reading this correctly, Intel/MU say they have started "volume production" of a ferroelectric NAND device; that others (such as a group from AIST, see below) have been working on similar IP but are far behind because they are focused on (a) a different ferroelectric material as compared to the gate material Intel has developed, and (b) a more complicated FinFet structure rather the "old school" planar circuit design developed by MU. see AIST work disclosed at: (2008 cell demonstration) http://www.aist.go.jp/aist_e/latest_research/2008/20080624/20080624.html (2012 64Kb cell array demonstration) http://www.nanowerk.com/news/newsid=23983.php I find this all very very very difficult to believe in view of the industry's track record of premature claims of new NV memory "production;" but most of all because Intel/MU are claiming to be able to produce this planar "Fe-NAND" device at sub 30nm lithographies currently with plans to soon drop production below the 20nm node. Such devices with even half the performance claimed for the AIST cell design would go through the current FLASH application markets like something through a goose. Has Intel/MU developed a new memory IP or just a new promotion? Have they ever submitted anything at an industry conference on such IP?

resistion
User Rank
Author
re: Intel, Micron on sub 20-nm and insatiable thirst for memory
resistion   4/19/2012 3:19:34 PM
NO RATINGS
So Micron is not getting on the 3D NAND train?

krisi
User Rank
Author
re: Intel, Micron on sub 20-nm and insatiable thirst for memory
krisi   4/18/2012 11:29:46 PM
NO RATINGS
If there is only 20 electrons difference left between two memory states there is not much hope that this technology will scale beyond 20nm process...time to employ spin instead of charge? Kris



Radio
NEXT UPCOMING BROADCAST

As we unveil EE Times’ 2015 Silicon 60 list, journalist & Silicon 60 researcher Peter Clarke hosts a conversation on startups in the electronics industry. Panelists from incubators join Peter Clarke in debate.
Flash Poll
Top Comments of the Week
Like Us on Facebook

Datasheets.com Parts Search

185 million searchable parts
(please enter a part number or hit search to begin)
Special Video Section
The LTC®4015 is a complete synchronous buck controller/ ...
10:35
The LT®3042 is a high performance low dropout linear ...
Chwan-Jye Foo (C.J Foo), product marketing manager for ...
The LT®3752/LT3752-1 are current mode PWM controllers ...
LED lighting is an important feature in today’s and future ...
Active balancing of series connected battery stacks exists ...
After a four-year absence, Infineon returns to Mobile World ...
A laptop’s 65-watt adapter can be made 6 times smaller and ...
An industry network should have device and data security at ...
The LTC2975 is a four-channel PMBus Power System Manager ...
In this video, a new high speed CMOS output comparator ...
The LT8640 is a 42V, 5A synchronous step-down regulator ...
The LTC2000 high-speed DAC has low noise and excellent ...
How do you protect the load and ensure output continues to ...
General-purpose DACs have applications in instrumentation, ...
Linear Technology demonstrates its latest measurement ...
10:29
Demos from Maxim Integrated at Electronica 2014 show ...
Bosch CEO Stefan Finkbeiner shows off latest combo and ...
STMicroelectronics demoed this simple gesture control ...
Keysight shows you what signals lurk in real-time at 510MHz ...