Embedded Systems Conference
Breaking News
Comments
Oldest First | Newest First | Threaded View
conroe
User Rank
Author
re: PCM Progress Report No. 7: A view of Samsung's 8-Gb array
conroe   5/4/2012 3:17:08 AM
NO RATINGS
Neale this was a very nice analysis of the Sumsung paper. You mention that "Micron recently issued a statement that it has developed a new PCM process that it plans to deploy sometime this year". Is there more information on this anywhere?

R G.Neale
User Rank
Author
re: PCM Progress Report No. 7: A view of Samsung's 8-Gb array
R G.Neale   5/4/2012 9:22:51 AM
NO RATINGS
Conroe-This was provided in the Micron Q2 2012 conference call for analysts to discuss earnings. Part of the quote that I have reads “….as well as our 20-nanometer DRAM node. We also made progress scaling up to 300-millimeter substrates on our 45-nanometer NOR process and in developing a new 300-millimeter phase-change memory process. Moving forward, we look to deploy both of these new 300-millimeter NOR and phase-change processes in the manufacturing fabs over the next year….” What would have been more interesting is to hear more on the type of PCM device (bit capacity etc.) they plan to use the process for and the timing for a fully qualified device. As IBM state they are reviewing seven technologies for the SKA perhaps a PCM device from Micron will be in that mix. In my original piece as submitted I characterized this as Micron’s much needed good news message, as the rest of the their news at the time was not so good. The reviewers and editor decided it was not part of my technical brief and did their job.

bingdao
User Rank
Author
re: PCM Progress Report No. 7: A view of Samsung's 8-Gb array
bingdao   6/4/2012 7:38:42 AM
NO RATINGS
I am your fans and I like your article very much! This is really something that PCM guys should focus and solve. Recently, I kind of read that Hynix also published some paper showing 1GB PCM. Did you hear that? What do you think of it?



Radio
LATEST ARCHIVED BROADCAST
As data rates begin to move beyond 25 Gbps channels, new problems arise. Getting to 50 Gbps channels might not be possible with the traditional NRZ (2-level) signaling. PAM4 lets data rates double with only a small increase in channel bandwidth by sending two bits per symbol. But, it brings new measurement and analysis problems. Signal integrity sage Ransom Stephens will explain how PAM4 differs from NRZ and what to expect in design, measurement, and signal analysis.

Datasheets.com Parts Search

185 million searchable parts
(please enter a part number or hit search to begin)
Like Us on Facebook
Special Video Section
The LTC®6363 is a low power, low noise, fully differential ...
Vincent Ching, applications engineer at Avago Technologies, ...
The LT®6375 is a unity-gain difference amplifier which ...
The LTC®4015 is a complete synchronous buck controller/ ...
10:35
The LTC®2983 measures a wide variety of temperature sensors ...
The LTC®3886 is a dual PolyPhase DC/DC synchronous ...
The LTC®2348-18 is an 18-bit, low noise 8-channel ...
The LT®3042 is a high performance low dropout linear ...
Chwan-Jye Foo (C.J Foo), product marketing manager for ...
The LT®3752/LT3752-1 are current mode PWM controllers ...
LED lighting is an important feature in today’s and future ...
Active balancing of series connected battery stacks exists ...
After a four-year absence, Infineon returns to Mobile World ...
A laptop’s 65-watt adapter can be made 6 times smaller and ...
An industry network should have device and data security at ...
The LTC2975 is a four-channel PMBus Power System Manager ...
In this video, a new high speed CMOS output comparator ...
The LT8640 is a 42V, 5A synchronous step-down regulator ...
The LTC2000 high-speed DAC has low noise and excellent ...
How do you protect the load and ensure output continues to ...