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krisi
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re: Silicon Ventures tips plan to stem fabless VC drought
krisi   5/11/2012 2:02:21 PM
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Interesting plan...it all depends whether you can find those strategic sponsors

kdboyce
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re: Silicon Ventures tips plan to stem fabless VC drought
kdboyce   5/15/2012 4:44:30 AM
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The buyout portion of the plan is also tricky. A truly entrepreneurial company will always figure they are worth more than what the sponsor is willing to pay as a pre negotiated $$$ amount. The sponsor has to already be interested in the company to be acquired, otherwise why sponsor. I can see the sponsor as considering Silicon Ventures sharing the risk somewhat for a "3%-5% return". It seems to me that the real value to the sponsor is off balance sheet development which they may have to absorb (the "buyout") later down stream. To work, there would have to be many ways locked in to do the deal, and not many ways to get out of it - for both parties.

C.PaulSlaby
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re: Silicon Ventures tips plan to stem fabless VC drought
C.PaulSlaby   5/17/2012 1:40:23 PM
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The semiconductor business has changed, the glory days appear to be over and are not likely to come back. It is a different world now and no amount of nostalgia is going to change that. In particular, the old business model of fabless semiconductor companies is, for all practical purposes, dead, when it comes to start-ups and emerging companies (you can find more about it in this presentation: http://www.design-reuse.com/exclusive/kaben/). There is a need for new approaches that have a chance to bring significant ROI justifying investments. Just because the old ways of doing business are no longer applicable, this does not mean there is not a need or a demand for semiconductor start-ups and their innovation - quite contrary! But the way we go about it has to be different. To avoid repeating myself, I refer you to this article: http://www.eetimes.com/electronics-news/4074052/Letter-to-the-editor-IP-cars-share-common-ground



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michigan0 Sang Kim First, 28nm bulk is in volume manufacturing for several years by the major semiconductor companies but not 28nm FDSOI today yet. Why not? Simply because unlike 28nm bulk the LDD(Lightly Doped Drain) to minimize hot carrier generation can't be implemented in 28nm FDSOI. Furthermore, hot carrier reliability becomes worse with scaling, That is the major reason why 28nm FDSOI is not manufacturable today and will not be. Second, how can you suppress the leakage currents from such ultra short 7nm due to the short channel effects? How thin SOI thickness is required to prevent punch-through of un-dopped 7nm FDSOI? Possibly less than 4nm. Depositing such an ultra thin film less then 4nm filum uniformly and reliably over 12" wafers at the manufacturing line is extremely difficult or not even manufacturable. If not manufacturable, the 7nm FDSOI debate is over!Third, what happens when hot carriers are generated near the drain at normal operation of 7nm FDSOI? Electrons go to the positively biased drain with no harm but where the holes to go? The holes can't go to the substrate because of the thin BOX layer. Some holes may become trapped at the BOX layer causing Vt shift. However, the vast majority of holes drift through the the un-dopped SOI channel toward the N+Source,...
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