Embedded Systems Conference
Breaking News
Comments
Oldest First | Newest First | Threaded View
Page 1 / 2   >   >>
any1
User Rank
Author
re: Intel's FinFETs are less fin and more triangle
any1   5/17/2012 4:20:31 PM
NO RATINGS
I suspect that the "triangle" shape represents some compromise between what is simple and reproducible to fabricate with regards to high volume manufacturing considerations, and what is the ideal shape from from an electrical standpoint. It is also a more mechanically robust shape for a relatively high aspect ratio structure (less likely to break due to vibration, etc.).

krisi
User Rank
Author
re: Intel's FinFETs are less fin and more triangle
krisi   5/17/2012 4:23:33 PM
NO RATINGS
Avoiding sharp corners is always a good idea in silicon manufacturing due to electric field crowding in device operation...and even if you wanted sharp fin it would be difficult to make it always equally sharp hence yeild hit...I suspect 2012 pics were of the marketing types...Kris

HowardHDC
User Rank
Author
re: Intel's FinFETs are less fin and more triangle
HowardHDC   5/17/2012 5:36:34 PM
NO RATINGS
Simplest way to put it, rectangles have one more corner than triangles. Besides process variation, corners tend to have leakage current affecting off-stage performance, such as Vt and Ioff. In addition, the equivalent width of the FinFET may be easier to scale and control in triangular shape than in rectangular shape. It will be interesting to see NMOS vs PMOS with various width and how the width scaling is done.

motti2
User Rank
Author
re: Intel's FinFETs are less fin and more triangle
motti2   5/17/2012 6:33:16 PM
NO RATINGS
iniewski has it right on one aspect. Avoiding sharp corners is plausible advantage. The second aspect I suspect is the ability to measure sidewall roughness without sidewall afm - atomic force microscopy that taps laterally ( the old IBM AFM that was a poor machine ). Here with sloped sidewalls, a topview high resolution SEM electron microscope images sidewalls usefully, and a comventional AFM topview tapping more trivially gets the needed "sidewall" roughness quantitaitvely measured with little difficulty versus the challenging vertical 90deg sidewall. And manufacturing metrology ease and accuracy of roughness here, which is a critical device parameter, since the surface is ETCHED ( worst thing you normally might do for a desired atomically smooth surface )... Hence I suspect nano- metrology aspects are the driver ( this being a process engineer's perspective, not theoretical in the slightest )

chipmonk0
User Rank
Author
re: Intel's FinFETs are less fin and more triangle
chipmonk0   5/17/2012 7:21:05 PM
NO RATINGS
Perhaps it was intentional to flood the media with sketches& even SEMs of rt. angled fins so that the pretenders and knock off artists would be misled for a while. But the important thing is that the power consumption for Ivy Bridge ( 22 nm, FinFET ) is NOT yet significantly less than Sandy Bridge to get a foot in the door at the SoC for SmartPhones house.

I_B_GREEN
User Rank
Author
re: Intel's FinFETs are less fin and more triangle
I_B_GREEN   5/17/2012 7:48:20 PM
NO RATINGS
hellooow fins are triangles!

PV-Geek
User Rank
Author
re: Intel's FinFETs are less fin and more triangle
PV-Geek   5/17/2012 11:08:50 PM
NO RATINGS
Corner leakage is usually a problem, but so is reproducability and control. It is difficult to know from so little data, how much of this triangle approach is for leakage vs. process control (yield). If the power levels don't give a dividend it will all be for naught.

resistion
User Rank
Author
re: Intel's FinFETs are less fin and more triangle
resistion   5/18/2012 1:56:59 AM
NO RATINGS
I'd always expect a round top, but the sidewall angle control affects how much footprint is actually occupied by the fin. So it's not a trivial consideration, they would have to keep the angle.

Chipguy1
User Rank
Author
re: Intel's FinFETs are less fin and more triangle
Chipguy1   5/18/2012 3:07:08 AM
NO RATINGS
Don't these sloped fins cause a lot of variation? The device channel orientation is random vs 110 for ideal finfet and 100 for planar (mobility and many sources of variation) Fin thickness depends on sidewall slope....and fin thickness sets my leakage and device threshold voltage, right? I have bee puzzled why everyone claims trigate lowers standby leakage BUT I don't see any improvement in standby power at the chip level for intels 22nm ivy bridge?? Could this be the reasons leakage improvement does not match expectation for "ideal trigate". http://www.anandtech.com/show/5771/the-intel-ivy-bridge-core-i7-3770k-review/20

Peter Clarke
User Rank
Author
re: Intel's FinFETs are less fin and more triangle
Peter Clarke   5/18/2012 9:33:12 AM
NO RATINGS
in elevation but not in cross-section

Page 1 / 2   >   >>


Radio
NEXT UPCOMING BROADCAST
In conjunction with unveiling of EE Times’ Silicon 60 list, journalist & Silicon 60 researcher Peter Clarke hosts a conversation on startups in the electronics industry. One of Silicon Valley's great contributions to the world has been the demonstration of how the application of entrepreneurship and venture capital to electronics and semiconductor hardware can create wealth with developments in semiconductors, displays, design automation, MEMS and across the breadth of hardware developments. But in recent years concerns have been raised that traditional venture capital has turned its back on hardware-related startups in favor of software and Internet applications and services. Panelists from incubators join Peter Clarke in debate.
Flash Poll
Top Comments of the Week
Like Us on Facebook

Datasheets.com Parts Search

185 million searchable parts
(please enter a part number or hit search to begin)
Special Video Section
The LT®3042 is a high performance low dropout linear ...
Chwan-Jye Foo (C.J Foo), product marketing manager for ...
The LT®3752/LT3752-1 are current mode PWM controllers ...
LED lighting is an important feature in today’s and future ...
Active balancing of series connected battery stacks exists ...
After a four-year absence, Infineon returns to Mobile World ...
A laptop’s 65-watt adapter can be made 6 times smaller and ...
An industry network should have device and data security at ...
The LTC2975 is a four-channel PMBus Power System Manager ...
In this video, a new high speed CMOS output comparator ...
The LT8640 is a 42V, 5A synchronous step-down regulator ...
The LTC2000 high-speed DAC has low noise and excellent ...
How do you protect the load and ensure output continues to ...
General-purpose DACs have applications in instrumentation, ...
Linear Technology demonstrates its latest measurement ...
10:29
Demos from Maxim Integrated at Electronica 2014 show ...
Bosch CEO Stefan Finkbeiner shows off latest combo and ...
STMicroelectronics demoed this simple gesture control ...
Keysight shows you what signals lurk in real-time at 510MHz ...
TE Connectivity's clear-plastic, full-size model car shows ...