Embedded Systems Conference
Breaking News
Comments
Newest First | Oldest First | Threaded View
<<   <   Page 2 / 3   >   >>
Flyer123
User Rank
Author
re: UK researchers follow silicon-oxide ReRAM route
Flyer123   5/24/2012 3:28:18 PM
NO RATINGS
In mass production it might be. And there is no factory in the world which wouldn't rather deal with silicon than any other material.

xprmntl
User Rank
Author
re: UK researchers follow silicon-oxide ReRAM route
xprmntl   5/24/2012 2:11:03 PM
NO RATINGS
In the overall cost of a RRAM chip, deposition of a few hundred angstroms of most metal oxides (eg. TiO2, Al2O3, HfO2, NiO, etc) is not significantly more expensive than deposition of silicon oxide, so it's not likely a cost driver.

Flyer123
User Rank
Author
re: UK researchers follow silicon-oxide ReRAM route
Flyer123   5/23/2012 11:11:00 PM
NO RATINGS
Moreover it seems they don't need current compliance as in case of Hwang's work. It would be interesting to see if silicon has future as ReRam. That would reduce the cost significantly.

Flyer123
User Rank
Author
re: UK researchers follow silicon-oxide ReRAM route
Flyer123   5/23/2012 10:51:33 PM
NO RATINGS
If I got it right this is the bulk effect and Rice's study is more related to SiO2 substrates where the formation is on the surface - one of the reasons it doesn't work in the air. NDR effect is known for many years but the operational device with properties to match flash and be cheap is different thing...

xprmntl
User Rank
Author
re: UK researchers follow silicon-oxide ReRAM route
xprmntl   5/23/2012 10:37:01 PM
NO RATINGS
Two more examples, which were previously cited by Blaise Mouttet, infamous Memristor denier: D. R. Lamb and P. C. Rundle, "A non-filamentary switching action in thermally grown silicon dioxide films", Br. J. Appl. Phys. 18, 29-32 (1967) Dow Corning also did work on SiO2 ReRAM in the early 1990's (US Patent 5283545).

xprmntl
User Rank
Author
re: UK researchers follow silicon-oxide ReRAM route
xprmntl   5/23/2012 9:34:16 PM
NO RATINGS
Interesting claims they have on being first. Others besides James Tour have published recently on SiOx RRAM--Jack Lee of UT-Austin, and Hyunsang Hwang of Gwangju University, Korea with Luigi Pantisano of IMEC. There are also a few published reports from the '70's, one by MJ Howes and another by RM Anderson.

CC VanDorne
User Rank
Author
re: UK researchers follow silicon-oxide ReRAM route
CC VanDorne   5/23/2012 4:03:17 PM
NO RATINGS
I think the key to a successful product introduction is the controller in front of the bucket-o-bits. As long as the controller interface is such that the CPU is indifferent to what's behind it then they can quickly get competitive products out into the market in standard storage formats. That'll free them up to sell the advantages of this technology over NAND - faster, lower-power, lower costs etc.

Kinnar
User Rank
Author
re: UK researchers follow silicon-oxide ReRAM route
Kinnar   5/23/2012 12:02:13 PM
NO RATINGS
ReRAM is the most awaited replacement of Flash RAM if it get successful implementation as compared to FlashRAM. It really need Chemical Engineers and Nano Technology experts working behind the early invention of the possibilities associated with ReRAM.

resistion
User Rank
Author
re: UK researchers follow silicon-oxide ReRAM route
resistion   5/23/2012 12:24:38 AM
NO RATINGS
My lasting impression of MLC is someone showing a distribution with tail bits and saying "this shows MLC capability"..ok. If the resistance depends on the last voltage applied, that may not be so useful for memory, but maybe for a memristor.

jg_
User Rank
Author
re: UK researchers follow silicon-oxide ReRAM route
jg_   5/22/2012 11:00:35 PM
NO RATINGS
Here is an important detail, many seem to have overlooked : ["The UCL devices also display a continuously variable resistance that depends on the last voltage that was applied."] Current Flash already allows Multi-Bit cells, so any alternative is going to have to have the same ability, in order to be far enough ahead of flash, to be worth the bother.

<<   <   Page 2 / 3   >   >>


Radio
LATEST ARCHIVED BROADCAST
As data rates begin to move beyond 25 Gbps channels, new problems arise. Getting to 50 Gbps channels might not be possible with the traditional NRZ (2-level) signaling. PAM4 lets data rates double with only a small increase in channel bandwidth by sending two bits per symbol. But, it brings new measurement and analysis problems. Signal integrity sage Ransom Stephens will explain how PAM4 differs from NRZ and what to expect in design, measurement, and signal analysis.

Datasheets.com Parts Search

185 million searchable parts
(please enter a part number or hit search to begin)
Like Us on Facebook
Special Video Section
The LTC®6363 is a low power, low noise, fully differential ...
Vincent Ching, applications engineer at Avago Technologies, ...
The LT®6375 is a unity-gain difference amplifier which ...
The LTC®4015 is a complete synchronous buck controller/ ...
10:35
The LTC®2983 measures a wide variety of temperature sensors ...
The LTC®3886 is a dual PolyPhase DC/DC synchronous ...
The LTC®2348-18 is an 18-bit, low noise 8-channel ...
The LT®3042 is a high performance low dropout linear ...
Chwan-Jye Foo (C.J Foo), product marketing manager for ...
The LT®3752/LT3752-1 are current mode PWM controllers ...
LED lighting is an important feature in today’s and future ...
Active balancing of series connected battery stacks exists ...
After a four-year absence, Infineon returns to Mobile World ...
A laptop’s 65-watt adapter can be made 6 times smaller and ...
An industry network should have device and data security at ...
The LTC2975 is a four-channel PMBus Power System Manager ...
In this video, a new high speed CMOS output comparator ...
The LT8640 is a 42V, 5A synchronous step-down regulator ...
The LTC2000 high-speed DAC has low noise and excellent ...
How do you protect the load and ensure output continues to ...