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Thomas McCormick
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re: Spansion sampling single-level cell NAND for embedded apps
Thomas McCormick   5/24/2012 11:13:08 PM
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It is indeed great to see Spansion in the NAND business. SLC memory at less aggressive lithographies to focus on the reliability and lifetime demands of embedded applications is a welcome addition to the marketplace.

mcgrathdylan
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re: Spansion sampling single-level cell NAND for embedded apps
mcgrathdylan   5/24/2012 6:05:07 PM
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I posed this question to Spansion and heard back that the 8 Gb solutions are dual die.

EFosters
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re: Spansion sampling single-level cell NAND for embedded apps
EFosters   5/24/2012 3:57:21 PM
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It is great to have Spansion in the NAND business. We are currently using a Samsung device with two 4Gb dies in a TSOP package (with one CE), but are very concerned about obsolescence. We've run into issues in the past too with EOLs on 512 Mb and 1 Gb NAND. Does anyone know if the 8 Gb device is monolithic or dual die?



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As data rates begin to move beyond 25 Gbps channels, new problems arise. Getting to 50 Gbps channels might not be possible with the traditional NRZ (2-level) signaling. PAM4 lets data rates double with only a small increase in channel bandwidth by sending two bits per symbol. But, it brings new measurement and analysis problems. Signal integrity sage Ransom Stephens will explain how PAM4 differs from NRZ and what to expect in design, measurement, and signal analysis.

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