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wilber_xbox
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re: Research shows more strain can improve transistors
wilber_xbox   6/28/2012 2:40:41 PM
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How much improvement do the researchers get with high strains? If the improvement is incremental then its just another research article otherwise something to cheer about.

goafrit
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re: Research shows more strain can improve transistors
goafrit   6/26/2012 9:18:36 PM
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I agree that calibrating out the mobility differences in holes and electrons could be a worthwhile effort

daleste
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re: Research shows more strain can improve transistors
daleste   6/26/2012 3:14:24 AM
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It would be good to have matching mobility in p and n type material, but at what cost? The industry has done a good job in compensating for this mismatch.



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As data rates begin to move beyond 25 Gbps channels, new problems arise. Getting to 50 Gbps channels might not be possible with the traditional NRZ (2-level) signaling. PAM4 lets data rates double with only a small increase in channel bandwidth by sending two bits per symbol. But, it brings new measurement and analysis problems. Signal integrity sage Ransom Stephens will explain how PAM4 differs from NRZ and what to expect in design, measurement, and signal analysis.

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