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resistion
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re: Micron claims first high-volume production of PCM
resistion   7/18/2012 12:58:01 AM
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The problem is there is also NAND+DRAM MCP, and it's hard for any NOR-like component to compete with that on cost at the Gb level.

greenpattern
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re: Micron claims first high-volume production of PCM
greenpattern   7/18/2012 1:07:32 AM
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High-power consuming PCM + high-power consuming DRAM, that's brilliant.

resistion
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re: Micron claims first high-volume production of PCM
resistion   7/18/2012 1:30:04 AM
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Their previous 90nm product was standalone NOR. Apparently didn't fly, so they're trying MCP like Samsung's NC-PRAM. That's gone too.

Gil Russell
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re: Micron claims first high-volume production of PCM
Gil Russell   7/18/2012 3:58:22 PM
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Second source?...,

selinz
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re: Micron claims first high-volume production of PCM
selinz   7/18/2012 9:11:54 PM
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It seems like the ratio of PCM to Dram is too low. Should this be more like 10:1?

mcgrathdylan
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re: Micron claims first high-volume production of PCM
mcgrathdylan   7/18/2012 10:27:54 PM
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Story was updated this morning after I spoke with Philippe Berge, senior director of NOR, PCM, e.MMC business for Micron's Wireless Solutions Group. Berge said Micron has previously had PCM in volume production at 90-nm. He also touted this latest announcement as proof of PCM's potential.

Jame77
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re: Micron claims first high-volume production of PCM
Jame77   7/18/2012 10:42:12 PM
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Waiting for the "PCM is a techno-ponzi" guy to chime in.

mcgrathdylan
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re: Micron claims first high-volume production of PCM
mcgrathdylan   7/18/2012 11:14:14 PM
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I know. I have kind of been waiting to hear from Volatile Memory on this, too.

R G.Neale
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re: Micron claims first high-volume production of PCM
R G.Neale   7/18/2012 11:53:28 PM
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In a comment added to my piece published July 2010 http://www.eetimes.com/electronics-news/4205010/Phase-change-memory-rebuttal a reader cited a quote from Samsung “…Memory for portable consumer devices today is at a major turning point as mobile applications increasingly require more diverse memory technology,” said Jun Dong-soo, an executive vice president at Samsung Electronics. “The launch of our PRAM in an advanced MCP solution for the replacement of 40 nm-class and finer geometry NOR meets this need head-on,” he said...." The results of that head-on collision may have some relevance to Micron as they proceed along what appears to be the same road. For the new PCM I assume and hope “availability” means the 1G-bit MCP is fully qualified and with an associated data sheet. The write/erase lifetime cited for this 1 G-bit 45nm MCP device is given as 100,000 cycles, whereas Micron’s prediction for w/e cycle lifetime at 45nm was 10E9 cycles. This was discussed in http://www.eetimes.com/design/memory-design/4210054/PCM-Scalability-The-Myth--Part-2-?pageNumber=0 All things being equal, it may be churlish to describe this is anything but PCM progress; representing a scaling holding point until, and if, the very difficult PCM scaling problems ever get solved. My view is unless Micron can in short order get a scaled 8G-bit PCM in the MCP or their Cube (or even a multi-chip based 8G-bit PCM) they will suffer the same fate as the Samsung MCP-PCM. So continuing the road analogy above we hope they have their seat belts on.

R G.Neale
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re: Micron claims first high-volume production of PCM
R G.Neale   7/19/2012 12:14:15 AM
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Dylan: Did Micron tell you how many of these 90nm devices in "volume production" were actually shipped and sold? More importantly how many product design- in wins were achieved? "Proof of PCM's potential" I think PCM potential has been there for fifty years-for PCM realization of potential is the name of the game, with PCM devices that are competitive in price, performance and reliability.

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