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James7740
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re: FinFETs-on-SOI can double battery life, says GSS
James7740   7/27/2012 10:29:48 AM
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The leakage of Ivy bridge is higher than expected. It is clear intel will need to fix leakage before it can make SOC for cell phone market. This was arm CEO point (eetime yesterday) that intel is not ready for mobile 22, ships 32nm atom today, while arm is shipping 28nm. So this GSS data point seems to suggest arm CEO might be right? Perhaps SOI is want intel adopts to fix this issue and ship 22nm atom in 2013? Or SOI for 14nm?

Kinnar
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re: FinFETs-on-SOI can double battery life, says GSS
Kinnar   7/27/2012 9:28:29 AM
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The simulation has shown great results in terms of reducing leakage current and increasing the battery life. Lets wait for the its actual feasibility in the foundry processes there is no doubt about the acceptability of it if the foundries can handle the processes.

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As data rates begin to move beyond 25 Gbps channels, new problems arise. Getting to 50 Gbps channels might not be possible with the traditional NRZ (2-level) signaling. PAM4 lets data rates double with only a small increase in channel bandwidth by sending two bits per symbol. But, it brings new measurement and analysis problems. Signal integrity sage Ransom Stephens will explain how PAM4 differs from NRZ and what to expect in design, measurement, and signal analysis.

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