Tech cannot be fully developed yet, as IBM or its JDA partners aren't introducing it at 20nm. So more development would definitely be needed. However IBM JDA partners have been co-developing tech for many generations including ST, GF, & Samsung, so I am not too worried for IBM technology
TSMC refers to their first FinFET process as 16-nm.......but ASML and UMC have both said that regardless of that these initial foundry FinFET processes are called they will be the application of FinFET front-end processing to the same back-end interconnect used at 20-nm
Lithographically, foundry's 28 nm should be close to Intel's 22 nm at about 45 nm half-pitch.
But the fin process adds extra cost without helping transistor density. I'd be curious if foundry 28 nm transistors perform so poorly against Intel's 22 nm FinFET.
What are the engineering and design challenges in creating successful IoT devices? These devices are usually small, resource-constrained electronics designed to sense, collect, send, and/or interpret data. Some of the devices need to be smart enough to act upon data in real time, 24/7. Are the design challenges the same as with embedded systems, but with a little developer- and IT-skills added in? What do engineers need to know? Rick Merritt talks with two experts about the tools and best options for designing IoT devices in 2016. Specifically the guests will discuss sensors, security, and lessons from IoT deployments.