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resistion
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re: TSMC on 450-mm wafers and lithography
resistion   10/27/2012 3:15:12 AM
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A 300 mm EUV tool would be restricted to a single node, not worth it. Better to have 450 mm first and bridge tools.

resistion
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re: TSMC on 450-mm wafers and lithography
resistion   10/4/2012 3:09:52 PM
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Maybe "10 nm" is just original "14 nm" (~20 nm hp) plus 450 mm, just like "16 nm" is probably "20 nm" (~30 nm hp) plus finfet.

resistion
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re: TSMC on 450-mm wafers and lithography
resistion   9/6/2012 12:53:38 AM
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Well we know now "10 nm", "16 nm" may all be merely just names. What is the real half-pitch in these cases?

Peter Clarke
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re: TSMC on 450-mm wafers and lithography
Peter Clarke   9/5/2012 5:19:09 PM
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It looks Burn Lin was pushing back EUVL...again.

goafrit
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re: TSMC on 450-mm wafers and lithography
goafrit   9/5/2012 3:25:15 PM
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TSMC is doing well. But time has come for TSMC to start making product. Intel and Samsung are doing so.



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As data rates begin to move beyond 25 Gbps channels, new problems arise. Getting to 50 Gbps channels might not be possible with the traditional NRZ (2-level) signaling. PAM4 lets data rates double with only a small increase in channel bandwidth by sending two bits per symbol. But, it brings new measurement and analysis problems. Signal integrity sage Ransom Stephens will explain how PAM4 differs from NRZ and what to expect in design, measurement, and signal analysis.

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