Theoretical conversion eff. limit for CIGS thin film, as predicted by NREL of DOE ( Boulder, CO ), is as high as 18 % ( as compared to 24 % for single xtal Si ) but only up to 16 % has been demonstrated so far in lab samples.
Because it has 4 components and separates into many quasi-stable phases depending on processing, CIGS thin film is a notoriously difficult material to control and shows variation in conversion eff. Many US companies have been struggling with this for years.
What I would like to know is what sort of production rate and yield TSMC is managing to get at their Pilot Line.
Otherwise this report is just PR flak.