They are just renaming their 20nm process as 14nm. The challenge still remains to get yield with FinFETS.
When they do get yield they can say they are competitive. Without yield, it may as well be a mee too PhD thesis.
I think you have to give GF credit for boldness. As the comments above allude to, they had their share of yield issues at 32-nm. The GF executives I spoke with said they wanted to wait until the process design kit was available to make the announcement. To G. Dan Hutcheson of VLSI Research, the fact that the process design kit is available is the key to the announcement.
You're a little more optimistic than me. I think they're overconfident given that 14nm is the first node they'll use FinFETs at, along with the fact they haven't begun any kind of volume with 20nm (even 28nm is fresh out the door).
But we'll see. If Globalfoundries pulls this off they'll be in a strong position.
What are the engineering and design challenges in creating successful IoT devices? These devices are usually small, resource-constrained electronics designed to sense, collect, send, and/or interpret data. Some of the devices need to be smart enough to act upon data in real time, 24/7. Are the design challenges the same as with embedded systems, but with a little developer- and IT-skills added in? What do engineers need to know? Rick Merritt talks with two experts about the tools and best options for designing IoT devices in 2016. Specifically the guests will discuss sensors, security, and lessons from IoT deployments.