You're a little more optimistic than me. I think they're overconfident given that 14nm is the first node they'll use FinFETs at, along with the fact they haven't begun any kind of volume with 20nm (even 28nm is fresh out the door).
But we'll see. If Globalfoundries pulls this off they'll be in a strong position.
I think you have to give GF credit for boldness. As the comments above allude to, they had their share of yield issues at 32-nm. The GF executives I spoke with said they wanted to wait until the process design kit was available to make the announcement. To G. Dan Hutcheson of VLSI Research, the fact that the process design kit is available is the key to the announcement.
What are the engineering and design challenges in creating successful IoT devices? These devices are usually small, resource-constrained electronics designed to sense, collect, send, and/or interpret data. Some of the devices need to be smart enough to act upon data in real time, 24/7. Specifically the guests will discuss sensors, security, and lessons from IoT deployments.