Adele, the industry is making bulk FinFETs due to the lower cost. There are no serious advantages in SOI FinFETs as long as you can keep consistent fin height in bulk FinFETs, and it was reported to be +-1nm at VLSI Technology conference this year. The channel-stop doping is below the fin channel and has a negligible impact on the overall variability.
Victor, have you looked at FinFET on SOI? Re: fin shape, the GSS guys (and others) are saying FinFETs would be better for power, perf & mfg on SOI (see http://www.advancedsubstratenews.com/2012/08/power-performance-gss-sees-soi-advantages-for-finfets/ ) And with respect to variability, with an SOI FinFET, you don't dope, so you don't have the RDF problem. Modeling guru Jerry Fossum very eloquently explained it a five (!) years ago (see http://www.advancedsubstratenews.com/2007/05/a-perspective-on-multi-gate-mosfets/ ). Your thoughts?
What are the engineering and design challenges in creating successful IoT devices? These devices are usually small, resource-constrained electronics designed to sense, collect, send, and/or interpret data. Some of the devices need to be smart enough to act upon data in real time, 24/7. Specifically the guests will discuss sensors, security, and lessons from IoT deployments.