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yalanand
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re: Teardown: Apple iPad 4
yalanand   11/17/2012 3:39:53 AM
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@Borisblade, there are totally 25 page info. Did you go through all of it ? Do you feel some info is missing in this page. I felt this was a very informative article.

Alberttech
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re: Teardown: Apple iPad 4
Alberttech   11/15/2012 11:23:40 AM
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Peio
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re: Teardown: Apple iPad 4
Peio   11/13/2012 9:08:23 AM
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Maybe you chose the wrong magazine. Which is full of photos of sexy girls is another.

SylvieBarak
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re: Teardown: Apple iPad 4
SylvieBarak   11/12/2012 5:13:45 PM
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Yes, except this is not a teardown of the Mini... it's a teardown of the iPad 4, which is barely distinguishable from the 3. If I was an Apple fangirl, I would be quite disappointed... but as a regular gadget loving girl, I don't much care. It just means the 3 will be marginally cheaper if I decide to buy it for anyone this Christmas!!

Daniel Payne
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re: Teardown: Apple iPad 4
Daniel Payne   11/12/2012 4:59:03 PM
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Good article with all of the details on ICs used in the design, my only nit is that it has been 7 months since the iPad 3 not 6 months (March to October).

rogerwilker
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re: Teardown: Apple iPad 4
rogerwilker   11/12/2012 4:54:36 PM
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Don't think previous versions have the capability to use the 5.0 ghtz wifi band. My router has had this capability for a couple of years with nothing capable of using that band. This is great as there is a lot less traffic on the 5.0 band. This has convinced me that with the faster cpu and wifi, I am ready to get an iPad.

rogerwilker
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re: Teardown: Apple iPad 4
rogerwilker   11/12/2012 4:51:15 PM
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One upgrade you forgot is the wifi capability of using 2.4 or 5.0. There by increasing wifi capability tremendously. So, you have a much faster processor and wifi speeds.

J---
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re: Teardown: Apple iPad 4
J---   11/12/2012 4:50:56 PM
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I will add .... what do we expect when we get a new PC now? Faster, bigger screen with more resolution, more memory and storage. We do not expect wiz bang features as most of that occurred in the early days. After that is has been incremental. Tablets are already evolutionary not revolutionary so why expect a game changer all the time?

J---
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re: Teardown: Apple iPad 4
J---   11/12/2012 4:48:41 PM
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Why disappointed? IPAD Mini is a great form factor. IPAD4 is faster and supports a new connector that will form the basis of the ecosystem moving forward. IPhone5 carries on a form factor tradition that is successful. I mean really for a tablet, what are you expecting? Screen is as good as needed now (except not 3D). Cameras are within limits of the technology (and cost). It's a tablet ... it does what is intended and well. While Apple is about form factor, its really about ecosystem and interoperability. There is no need for whiz-bang features to achieve that. People buy them because they work.

GREATTerry
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re: Teardown: Apple iPad 4
GREATTerry   11/11/2012 4:06:31 PM
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After all, what exactly is new in this iPad4 besides the CPU and lightning connector? With just an upgrade of IC with same functionality, I see not much innovation is in here! I frankly feel a bit disappointed with all 3 new products (iPad4, iPadmini, iPhone5) from Apple

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michigan0 Sang Kim First, 28nm bulk is in volume manufacturing for several years by the major semiconductor companies but not 28nm FDSOI today yet. Why not? Simply because unlike 28nm bulk the LDD(Lightly Doped Drain) to minimize hot carrier generation can't be implemented in 28nm FDSOI. Furthermore, hot carrier reliability becomes worse with scaling, That is the major reason why 28nm FDSOI is not manufacturable today and will not be. Second, how can you suppress the leakage currents from such ultra short 7nm due to the short channel effects? How thin SOI thickness is required to prevent punch-through of un-dopped 7nm FDSOI? Possibly less than 4nm. Depositing such an ultra thin film less then 4nm filum uniformly and reliably over 12" wafers at the manufacturing line is extremely difficult or not even manufacturable. If not manufacturable, the 7nm FDSOI debate is over!Third, what happens when hot carriers are generated near the drain at normal operation of 7nm FDSOI? Electrons go to the positively biased drain with no harm but where the holes to go? The holes can't go to the substrate because of the thin BOX layer. Some holes may become trapped at the BOX layer causing Vt shift. However, the vast majority of holes drift through the the un-dopped SOI channel toward the N+Source,...
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