Breaking News
Comments
Newest First | Oldest First | Threaded View
Page 1 / 3   >   >>
Ogemaniac
User Rank
Author
re: London Calling: TSMC next for New York fab?
Ogemaniac   12/20/2012 11:45:39 PM
NO RATINGS
It is obvious where the fab is going to wind up: it will be stuck very tightly to whichever local government puts forth the biggest and juiciest taxpayer's-hard-earned-money-filled teats. There was a wonderful article in the NYT a few weeks back about how local and state governments blow $80 billion a year poaching jobs from one another in this stupid, zero-sum manner. The solution is obviously a federal issue, so you can be sure nothing will get done because one party clearly has no incentive to stop this garbage.

conneally
User Rank
Author
re: London Calling: TSMC next for New York fab?
conneally   11/30/2012 6:31:44 PM
NO RATINGS
Why not Apple? Can Samsung keep up with production demands for Apple? Could GloFo keep up production demands? Is TSMC and Samsung providing the technology yields necessary to compete? So...highly doubtful Intel would go the NY fab route with the current investment in AZ and OR. What product is driving the industry that needs lower node size technology and higher production capability?

Mi302
User Rank
Author
re: London Calling: TSMC next for New York fab?
Mi302   11/26/2012 1:04:13 AM
NO RATINGS
Advantages: - They can poach talent from IBM and GE - Foreign Investor tax break - Whatever deals they make with New York State and the US government. RPI is close by too! Disadvantages: - New York State - New York State and most of all - New York State

Stanley_
User Rank
Author
re: London Calling: TSMC next for New York fab?
Stanley_   11/25/2012 10:54:12 PM
NO RATINGS
TSMC doesn't have any benefit having fab in NY. They don't develop technology in IBM camp, so they have to transfer technology from Taiwan, which is not efficient. In addition, Taiwan and China have more flexible and cheaper workforce. Apple asking is non-sense, as Apple and Samsung are simply one negotiation away from getting deal done. Too risky for TSMC to build a fab in NY just for one particular customer.. Maybe joint venture (i.e., different legal entity) with one of larger customers (Apple or Qualcomm) to build a dedicated fab in US may make more sense.

resistion
User Rank
Author
re: London Calling: TSMC next for New York fab?
resistion   11/25/2012 4:53:39 AM
NO RATINGS
Well now that Intel 14 nm finfet is supposedly unexpectedly delayed, who wants to dive in now.

Kresearch
User Rank
Author
re: London Calling: TSMC next for New York fab?
Kresearch   11/25/2012 1:59:33 AM
NO RATINGS
Proprietary Manufacturing Technology protection and transfer cost are another to be considered also.

resistion
User Rank
Author
re: London Calling: TSMC next for New York fab?
resistion   11/25/2012 1:22:01 AM
NO RATINGS
Besides the actual building cost, there is also the operating/maintaining cost. Samsung and TSMC already have US locations for comparison, why add a different US location? NY one-time subsidy doesn't make up for subsequent operation/resource costs of 10 nm fab, which are very location-dependent.

resistion
User Rank
Author
re: London Calling: TSMC next for New York fab?
resistion   11/25/2012 12:44:57 AM
NO RATINGS
I think NY would have courted Samsung besides TSMC. But for either case, a US location needs to be justified. It's always cheaper to build at existing locations.

Kresearch
User Rank
Author
re: London Calling: TSMC next for New York fab?
Kresearch   11/24/2012 11:02:07 PM
NO RATINGS
It sounds good. There are SUNY Albany, U Syracuse, Rensselaer and others also. But why Intel and Samsung do not build new fabs in NY State? This would be a tricky question.

melgross
User Rank
Author
re: London Calling: TSMC next for New York fab?
melgross   11/24/2012 4:37:59 PM
NO RATINGS
New York is actually a very good choice. There is excellent transportation, and facilities. A highly educated workforce (believe it or not), and a history of technology, with RIT being one of the most highly regarded institutions in the area. The U of Buffalo Is well respected in technology. The fact that so many other high tech firms have located here is evidence of its compatibility.

Page 1 / 3   >   >>


Datasheets.com Parts Search

185 million searchable parts
(please enter a part number or hit search to begin)
Radio
LATEST ARCHIVED BROADCAST

What are the engineering and design challenges in creating successful IoT devices? These devices are usually small, resource-constrained electronics designed to sense, collect, send, and/or interpret data. Some of the devices need to be smart enough to act upon data in real time, 24/7. Specifically the guests will discuss sensors, security, and lessons from IoT deployments.

Brought to you by:

Most Recent Comments
michigan0
 
SteveHarris0
 
realjjj
 
SteveHarris0
 
SteveHarris0
 
VicVat
 
Les_Slater
 
SSDWEM
 
witeken
Most Recent Messages
9/25/2016
4:48:30 PM
michigan0 Sang Kim First, 28nm bulk is in volume manufacturing for several years by the major semiconductor companies but not 28nm FDSOI today yet. Why not? Simply because unlike 28nm bulk the LDD(Lightly Doped Drain) to minimize hot carrier generation can't be implemented in 28nm FDSOI. Furthermore, hot carrier reliability becomes worse with scaling, That is the major reason why 28nm FDSOI is not manufacturable today and will not be. Second, how can you suppress the leakage currents from such ultra short 7nm due to the short channel effects? How thin SOI thickness is required to prevent punch-through of un-dopped 7nm FDSOI? Possibly less than 4nm. Depositing such an ultra thin film less then 4nm filum uniformly and reliably over 12" wafers at the manufacturing line is extremely difficult or not even manufacturable. If not manufacturable, the 7nm FDSOI debate is over!Third, what happens when hot carriers are generated near the drain at normal operation of 7nm FDSOI? Electrons go to the positively biased drain with no harm but where the holes to go? The holes can't go to the substrate because of the thin BOX layer. Some holes may become trapped at the BOX layer causing Vt shift. However, the vast majority of holes drift through the the un-dopped SOI channel toward the N+Source,...
Like Us on Facebook
Special Video Section
Once the base layer of a design has been taped out, making ...
In this short video we show an LED light demo to ...
The LTC2380-24 is a versatile 24-bit SAR ADC that combines ...
In this short video we show an LED light demo to ...
02:46
Wireless Power enables applications where it is difficult ...
07:41
LEDs are being used in current luxury model automotive ...
With design sizes expected to increase by 5X through 2020, ...
01:48
Linear Technology’s LT8330 and LT8331, two Low Quiescent ...
The quality and reliability of Mill-Max's two-piece ...
LED lighting is an important feature in today’s and future ...
05:27
The LT8602 has two high voltage buck regulators with an ...
05:18
Silego Technology’s highly versatile Mixed-signal GreenPAK ...
The quality and reliability of Mill-Max's two-piece ...
01:34
Why the multicopter? It has every thing in it. 58 of ...
Security is important in all parts of the IoT chain, ...
Infineon explains their philosophy and why the multicopter ...
The LTC4282 Hot SwapTM controller allows a board to be ...
This video highlights the Zynq® UltraScale+™ MPSoC, and sho...
Homeowners may soon be able to store the energy generated ...
The LTC®6363 is a low power, low noise, fully differential ...