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green_is_now
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re: ARM founder sees startups hustling in hard times
green_is_now   12/13/2012 1:49:27 AM
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Since hardware is capex intensive compared to a doughnut shop coupon app, hardware will linger behind the needs. Feature pull app "Engineers wishlist" to prioritise the hardware needed for the next gen products and features. Hey Robin, Worth investing in? :)

rick merritt
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re: ARM founder sees startups hustling in hard times
rick merritt   12/13/2012 1:30:46 AM
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Bill Tsai once laid out the math very clearly for me. VCs can spend a few tens of millions on a chip startup and hope it pays off more than $100M at exit. Or they can invest a few single-digit millions in a Web 2.0 startup and have a shot at a billion. Alas!

WiLess
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re: ARM founder sees startups hustling in hard times
WiLess   12/12/2012 1:38:52 AM
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VCs aren't interested in projects that span more that 4 years, but with the complexity of semi industry at this point you hardly can find any semi start-up that can bring ROI in that time frame. Software and apps could be quite complex too, but the turnaround time is much faster, especially with the app store infrastructure in place.

SylvieBarak
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re: ARM founder sees startups hustling in hard times
SylvieBarak   12/10/2012 7:24:58 PM
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I'm still not sure, however, how companies that write software and apps manage to pull in hundreds of thousands of dollars in VC funding for what is basically slideware, while engineers with ACTUAL products have to fight for every dollar. The semi space does require more capex, but that's because it produces real things....

GREATTerry
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re: ARM founder sees startups hustling in hard times
GREATTerry   12/10/2012 2:33:20 PM
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Interesting story. Yes, the world is now more complex and costly.



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michigan0 Sang Kim First, 28nm bulk is in volume manufacturing for several years by the major semiconductor companies but not 28nm FDSOI today yet. Why not? Simply because unlike 28nm bulk the LDD(Lightly Doped Drain) to minimize hot carrier generation can't be implemented in 28nm FDSOI. Furthermore, hot carrier reliability becomes worse with scaling, That is the major reason why 28nm FDSOI is not manufacturable today and will not be. Second, how can you suppress the leakage currents from such ultra short 7nm due to the short channel effects? How thin SOI thickness is required to prevent punch-through of un-dopped 7nm FDSOI? Possibly less than 4nm. Depositing such an ultra thin film less then 4nm filum uniformly and reliably over 12" wafers at the manufacturing line is extremely difficult or not even manufacturable. If not manufacturable, the 7nm FDSOI debate is over!Third, what happens when hot carriers are generated near the drain at normal operation of 7nm FDSOI? Electrons go to the positively biased drain with no harm but where the holes to go? The holes can't go to the substrate because of the thin BOX layer. Some holes may become trapped at the BOX layer causing Vt shift. However, the vast majority of holes drift through the the un-dopped SOI channel toward the N+Source,...
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