I am somewhat uncomfortable pointing this out, but the Stanford/Monolithic3D/Rambus IEDM paper (14.2) about heat extraction has absolutely nothing to do with TSVs. It talks about heat removal using inter-layer-vias of the Power Delivery Networks in monolithic 3D devices that have no TSVs. Just sayin'
The paper on reliability discussing the "Effect of Local Deformation Caused by Cu-TSVs..." has important implications to the placement of TSV's and the keep-out rules. This is something that is still developing and has many process-dependent influences (via middle or via last etc.) as well as type of stacking (die to die vs. wafer to wafer) and the die thickness.
Regrettably I could not attend IEDM this year but would be great to see more review articles as Kris also comments above.
As we unveil EE Times’ 2015 Silicon 60 list, journalist & Silicon 60 researcher Peter Clarke hosts a conversation on startups in the electronics industry. Panelists Dan Armbrust (investment firm Silicon Catalyst), Andrew Kau (venture capital firm Walden International), and Stan Boland (successful serial entrepreneur, former CEO of Neul, Icera) join in the live debate.