The read current is about a third of write current. The switching time depends on current, the lower current requires longer time. A long enough read could do it. But scaled down resistance goes up, slowing down read anyway.
What is the speed and current consumption for writing SST-MRAM? Write disturbance is a very serious issue for old MRAM. What is the write disturbance for present vertical SST-MRAM? Apreciate your comments.
What are the engineering and design challenges in creating successful IoT devices? These devices are usually small, resource-constrained electronics designed to sense, collect, send, and/or interpret data. Some of the devices need to be smart enough to act upon data in real time, 24/7. Are the design challenges the same as with embedded systems, but with a little developer- and IT-skills added in? What do engineers need to know? Rick Merritt talks with two experts about the tools and best options for designing IoT devices in 2016. Specifically the guests will discuss sensors, security, and lessons from IoT deployments.