The read current is about a third of write current. The switching time depends on current, the lower current requires longer time. A long enough read could do it. But scaled down resistance goes up, slowing down read anyway.
What is the speed and current consumption for writing SST-MRAM? Write disturbance is a very serious issue for old MRAM. What is the write disturbance for present vertical SST-MRAM? Apreciate your comments.
What are the engineering and design challenges in creating successful IoT devices? These devices are usually small, resource-constrained electronics designed to sense, collect, send, and/or interpret data. Some of the devices need to be smart enough to act upon data in real time, 24/7. Specifically the guests will discuss sensors, security, and lessons from IoT deployments.