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resistion
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re: Toshiba claims MRAM can replace SRAM
resistion   12/11/2012 3:43:54 PM
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No eventual disturb by subthreshold leakage? Not too sure about that.

WiLess
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re: Toshiba claims MRAM can replace SRAM
WiLess   12/12/2012 1:26:05 AM
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The power is not applied to MRAM cell when it is not accessed, therefore there is no subthreshold leakage. It can also be non-volatile because of that.

resistion
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CEO
re: Toshiba claims MRAM can replace SRAM
resistion   12/12/2012 4:57:16 AM
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But isn't there a transistor in series with the MRAM? That can pass subthreshold current.

krisi
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re: Toshiba claims MRAM can replace SRAM
krisi   12/12/2012 3:57:31 PM
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The physics of SST-MRAM is described in Nanoscale Semiconductor Memories: Technology and Applications by CRC Press

Victor.Shadan
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re: Toshiba claims MRAM can replace SRAM
Victor.Shadan   12/13/2012 4:46:32 PM
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What is the size of CACHE? Also how is this compare to Fero Electric Technology fro TI?

lwang61
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re: Toshiba claims MRAM can replace SRAM
lwang61   12/19/2012 10:18:26 AM
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What is the speed and current consumption for writing SST-MRAM? Write disturbance is a very serious issue for old MRAM. What is the write disturbance for present vertical SST-MRAM? Apreciate your comments.

resistion
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CEO
re: Toshiba claims MRAM can replace SRAM
resistion   4/23/2013 9:40:09 AM
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The read current is about a third of write current. The switching time depends on current, the lower current requires longer time. A long enough read could do it. But scaled down resistance goes up, slowing down read anyway.



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