Embedded Systems Conference
Breaking News
Newest First | Oldest First | Threaded View
User Rank
re: FDSOI roadmap renames next node as 14-nm
michigan0   1/12/2013 6:33:44 PM
World major foundries, TSMC, Samsung, GlobalFoundries, and UMC all get on to the Intel’s FinFET bandwagon after falling behind Intel. They all plan to introduce FDFinFETs at the 14-nm node in 2014, skipping the 22-nm node. The foundries schedule seems to be planed not to be falling too far behind Intel. IBM is the only major company adopting FDSOI for 28-nm and beyond. IBM was not successful in manufacturing any FDSOI and ETSOI after exit from PDSOI as the gate length shrinks. Now IBM Mendez reveals a bold roadmap that skips all technology nodes such as 28nm and 22nm and offers 14nm FDSOI at the same time as Intel’s 14-nm FinFET, and claims the same transistor performance with much lower costs. But the roadmap is unrealizable because of the following reasons: 1) Intel has gained very valuable/critical learning through 22-nm FinFET process development and manufacturing that will help enormously for quick fix of the problems, thus quick transition to 14-nm and beyond. IBM, on other hand, can’t get such learning by skipping the 28-nm and 22-nm FDSOI. As a result, IBM will encounter a larger number of unknown process/manufacturing problems at 14-nm FDSOI, thus will take much longer time and spend more resources to detect and fix the unknown problems. 2) Successful implementation of FinFET or FDSOI will be comparatively easier at 22-nm than 14-nm. Intel’s orderly approach to 14-nm FinFET without skipping the nodes will win out eventually. 3) 14-nm FDSOI will require an ultrathin approximately 3.5-nm channel layer to suppress transistor leakage current. IBM has to manufacture such thin layer by itself because Soitec can’t deliver it. What Soitec can deliver is the minimum thickness of 12-nm channel layer for the 28nm technology node wafer. How much such a wafer will cost for IBM if it were manufacturable? In my opinion Mendez roadmap for 14-nm FDSOI will not be achievable in 2014. IBM 14-nm FDSOI will be at least two years behind Intel’s 14nm FinFET or more. Skim

User Rank
re: FDSOI roadmap renames next node as 14-nm
Andrzej11   12/14/2012 9:34:31 PM
10 nm seemed to be the limit a while ago but I believe Intel has a 7 nm and 5 nm nodes on their roadmap. More incredible to me is that some feel that they will be able to extend immersion to sub 10 nm! One is left with the question will EUV ever reach mass production?

the_floating_ gate
User Rank
re: FDSOI roadmap renames next node as 14-nm
the_floating_ gate   12/12/2012 3:59:02 PM
"A summary slide from Horacio Mendez, executive director of the SOI Consortium, showed the jump with the comment that 14-nm FDSOI would be offered at the same time as Intel's 14-nm FinFET and would show the same performance characteristics but realizable at much lower cost." Any $ and cent? I don't think so Bohr stated that Intel looked at both - SOI and bulk and concluded bulk would have a slight cost advantage. SOI is somewhat "masking" the issue of fin height variation - at least my understanding. So if Intel can do it with bulk than they are far ahead - Intel continues to minimize height variation which will continue to be advantage at even smaller geometries

User Rank
re: FDSOI roadmap renames next node as 14-nm
krisi   12/12/2012 3:39:47 PM
Impressive roadmap for SOI...down to 10nm! and already in 2016...this is supposed to be the end of Moore's law according to many

User Rank
re: FDSOI roadmap renames next node as 14-nm
resistion   12/12/2012 2:35:44 PM
This node renaming borders on dishonest business, seriously.

As data rates begin to move beyond 25 Gbps channels, new problems arise. Getting to 50 Gbps channels might not be possible with the traditional NRZ (2-level) signaling. PAM4 lets data rates double with only a small increase in channel bandwidth by sending two bits per symbol. But, it brings new measurement and analysis problems. Signal integrity sage Ransom Stephens will explain how PAM4 differs from NRZ and what to expect in design, measurement, and signal analysis.

Datasheets.com Parts Search

185 million searchable parts
(please enter a part number or hit search to begin)
Like Us on Facebook
Special Video Section
The LTC®6363 is a low power, low noise, fully differential ...
Vincent Ching, applications engineer at Avago Technologies, ...
The LT®6375 is a unity-gain difference amplifier which ...
The LTC®4015 is a complete synchronous buck controller/ ...
The LTC®2983 measures a wide variety of temperature sensors ...
The LTC®3886 is a dual PolyPhase DC/DC synchronous ...
The LTC®2348-18 is an 18-bit, low noise 8-channel ...
The LT®3042 is a high performance low dropout linear ...
Chwan-Jye Foo (C.J Foo), product marketing manager for ...
The LT®3752/LT3752-1 are current mode PWM controllers ...
LED lighting is an important feature in today’s and future ...
Active balancing of series connected battery stacks exists ...
After a four-year absence, Infineon returns to Mobile World ...
A laptop’s 65-watt adapter can be made 6 times smaller and ...
An industry network should have device and data security at ...
The LTC2975 is a four-channel PMBus Power System Manager ...
In this video, a new high speed CMOS output comparator ...
The LT8640 is a 42V, 5A synchronous step-down regulator ...
The LTC2000 high-speed DAC has low noise and excellent ...
How do you protect the load and ensure output continues to ...