Embedded Systems Conference
Breaking News
Newest First | Oldest First | Threaded View
Peter Clarke
User Rank
re: London Calling: Could gate-switched FDSOI win?
Peter Clarke   12/14/2012 2:26:20 PM
The issue is the variability of the structures. Professor Asenov has extrapolated from bulk CMOS where it is the case that gate-last provides for less varitability in structures and therefore the ability to run devices over wider voltage ranges. Data is starting to come in from LETI/STMicroelectronics that supports the superioity of gate-first FDSOI over bulk CMOS and Professor Asenov has been able to calibrate his TCAD simulation against some of that data. But his point is that gate-last FDSOI should be even better and represents an opportunity for Samsung or TSMC or indeed any of the few companies that are left in leading-edge semiconductor manufacturing.

User Rank
re: London Calling: Could gate-switched FDSOI win?
pinhead1   12/13/2012 5:44:15 PM
I think metals generally do have crystalline structure, but the grain size is typically very small. I think that during a high temperature anneal, there could be regrowth that you wouldn't get if you skipped the anneal. However, I'm still not sure I buy the TCAD result. Advanced CMOS uses very short anneals to keep the junction shallow, and it's possible that clever engineering of stress films or dopant in the metal gate or something might impede recrystallization.

User Rank
re: London Calling: Could gate-switched FDSOI win?
krisi   12/13/2012 3:56:15 PM
thank you Tony...so the difference boils down to whether metal gate is amorphous or polycrystalline, right?...but I thought semiconductors can be amorphous, poly or mono but metals are metals, they can't be polycrystalline etc???

Tony Lange
User Rank
re: London Calling: Could gate-switched FDSOI win?
Tony Lange   12/13/2012 2:34:26 AM
It is about process: the following explanation is from Professor Asenov's blog: In metal-gate-first the implantation and activation of the self-aligned source and drain result in the polycrystalisation of the metal gate. In the commonly used TiN metal gate the resulting average metal grain size is 5-6nm. It is believed that in the gate-last technology the metal gate, deposited after the implantation activation, will not suffer high temperature treatments and can be kept amorphous, thus eliminating MGG as a source of statistical variability.

User Rank
re: London Calling: Could gate-switched FDSOI win?
krisi   12/13/2012 12:43:15 AM
I am not sure I understand. What Asenov simulate is semiconductor device with a certain gate stack. In the simulator it doesn't matter whether the gate is processed first or last, it is just there. What am I missing here? Kris P.s Disclaimer: I has been a while since I used Pisces, Medici or Silvaco's software, but the basic principle remains the same I think

Most Recent Comments
David Ashton
Most Recent Messages
9:18:32 PM
Overview: Battle-hardened veterans of the electronics industry have heard of the “connected car” so often that they assume it’s a done deal. But do we really know what it takes to get a car connected and what its future entails? Join EE Times editor Junko Yoshida as she moderates a panel of movers and shakers in the connected car business. Executives from Cisco, Siemens and NXP will share ideas, plans and hopes for connected cars and their future. After the first 30 minutes of the radio show, our listeners will have the opportunity to ask questions via live online chat.
Flash Poll
Like Us on Facebook

Datasheets.com Parts Search

185 million searchable parts
(please enter a part number or hit search to begin)
Special Video Section
LED lighting is an important feature in today’s and future ...
Active balancing of series connected battery stacks exists ...
After a four-year absence, Infineon returns to Mobile World ...
A laptop’s 65-watt adapter can be made 6 times smaller and ...
An industry network should have device and data security at ...
The LTC2975 is a four-channel PMBus Power System Manager ...
In this video, a new high speed CMOS output comparator ...
The LT8640 is a 42V, 5A synchronous step-down regulator ...
The LTC2000 high-speed DAC has low noise and excellent ...
How do you protect the load and ensure output continues to ...
General-purpose DACs have applications in instrumentation, ...
Linear Technology demonstrates its latest measurement ...
Demos from Maxim Integrated at Electronica 2014 show ...
Bosch CEO Stefan Finkbeiner shows off latest combo and ...
STMicroelectronics demoed this simple gesture control ...
Keysight shows you what signals lurk in real-time at 510MHz ...
TE Connectivity's clear-plastic, full-size model car shows ...
Why culture makes Linear Tech a winner.
Recently formed Architects of Modern Power consortium ...
Specially modified Corvette C7 Stingray responds to ex Indy ...