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greenpattern
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re: Tech trends: Details on Everspin's ST-MRAM
greenpattern   2/6/2013 5:03:09 PM
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Writing '0' or '1' to one row of ST-MRAM might disturb next row from cumulative magnetic field.

resistion
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re: Tech trends: Details on Everspin's ST-MRAM
resistion   2/6/2013 11:52:52 PM
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"Make the cell too small, and you run the risk of degrading data stability unless you can boost Eb. Working with an asymmetric bit shape and thicker ferromagnetic layers can modestly increase Eb, but choosing a material with higher magnetization provides much greater benefit" seems to suggest must continually change materials to scale. But that's not practical scalability.

resistion
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re: Tech trends: Details on Everspin's ST-MRAM
resistion   2/7/2013 12:15:18 AM
It's been said perpendicular STT can't scale current below ~30 uA. http://www.hes.ei.tum.de/fileadmin/w00bjl/www/uploads/Session_s8p1-ID248_IEDM_P-ST_MRAM_UKlostermann.pdf



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