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screwme
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re: Video: Intel’s CES press conference highlights
screwme   1/12/2013 2:41:24 AM
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Who the hell are you ass whipe woohoo to tell anyone to shut up you idiot moron! What the hel do you profess to have knowledge of, jack shit?

help.fulguy
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re: Video: Intel’s CES press conference highlights
help.fulguy   1/11/2013 8:40:35 PM
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@woohoo, you seem to be clueless. Read up or shut up

m00nshine
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re: Video: Intel’s CES press conference highlights
m00nshine   1/10/2013 1:55:58 PM
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Any thoughts on Intel power consumption controversy at CES? Did they make new metric to mislead about actual power consumption?

woohoo
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re: Video: Intel’s CES press conference highlights
woohoo   1/10/2013 9:59:46 AM
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*Atom platform for value market smartphones* what is new about this? It may be new for Intel, but in the market A9 based devices are already in every price slot you can imagine. what is the TDP and cost of one of these chips? what about the integrated graphics? One word - Disappointing.

yalanand
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re: Video: Intel’s CES press conference highlights
yalanand   1/10/2013 7:28:00 AM
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@sylvie, thanks for the update. No doubt Intel failed to capture the mobile market just like the way ARM capture smartphone market but that doesn't mean we can ruleout Intel completely. The features which you have mentioned in your articles will definitely help Intel to recapture the lost market.



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michigan0 Sang Kim First, 28nm bulk is in volume manufacturing for several years by the major semiconductor companies but not 28nm FDSOI today yet. Why not? Simply because unlike 28nm bulk the LDD(Lightly Doped Drain) to minimize hot carrier generation can't be implemented in 28nm FDSOI. Furthermore, hot carrier reliability becomes worse with scaling, That is the major reason why 28nm FDSOI is not manufacturable today and will not be. Second, how can you suppress the leakage currents from such ultra short 7nm due to the short channel effects? How thin SOI thickness is required to prevent punch-through of un-dopped 7nm FDSOI? Possibly less than 4nm. Depositing such an ultra thin film less then 4nm filum uniformly and reliably over 12" wafers at the manufacturing line is extremely difficult or not even manufacturable. If not manufacturable, the 7nm FDSOI debate is over!Third, what happens when hot carriers are generated near the drain at normal operation of 7nm FDSOI? Electrons go to the positively biased drain with no harm but where the holes to go? The holes can't go to the substrate because of the thin BOX layer. Some holes may become trapped at the BOX layer causing Vt shift. However, the vast majority of holes drift through the the un-dopped SOI channel toward the N+Source,...
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