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GroovyGeek
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re: Slideshow: IBM outlines fab future beyond FinFETs
GroovyGeek   2/13/2013 4:39:08 AM
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IBM has been mostly irrelevant to semiconductor process technology for at least a decade. I doubt many outside IBM can clear state why they even still do it. They certainly don't make any money from it. Yerning for the glory days perhaps?

help.fulguy
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re: Slideshow: IBM outlines fab future beyond FinFETs
help.fulguy   2/13/2013 3:02:03 AM
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Meanwhile Intel is laughing at these 3 bumbling idiots. They tried Gate First and lost. They keep losing. They keep talking new tech, while Intel will release the new technology.

resistion
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re: Slideshow: IBM outlines fab future beyond FinFETs
resistion   2/12/2013 11:52:45 PM
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So the difficulties are the source power also has to continually increase, and the resist outgassing increases.

resistion
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re: Slideshow: IBM outlines fab future beyond FinFETs
resistion   2/12/2013 11:47:12 PM
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The Rayleigh formula only has meaning if there are enough photons for defining the feature. EUV doesn't have enough, so the target dose continually increases as feature size shrinks.

Alex33
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re: Slideshow: IBM outlines fab future beyond FinFETs
Alex33   2/12/2013 8:23:05 PM
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That is the length of the whole unit cell. There are more atoms within the cell since it is a diamond crystal structure. Actual figures depend on orientation but for a 100 direction it would be 4x that.

Yog-Sothoth
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re: Slideshow: IBM outlines fab future beyond FinFETs
Yog-Sothoth   2/12/2013 7:32:14 PM
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The lattice constant of Si is about 5.4 angstroms so 70/5.4 = 13 atoms of silicon...

krisi
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re: Slideshow: IBM outlines fab future beyond FinFETs
krisi   2/12/2013 6:15:31 PM
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Patterning at 7nm is obviously tough but sounds people think it can be done...but is Mosfet still working at 7nm?...what is Ion/Ioff ratio?...how many dopant atoms are within transistor volume? what about statistical variations that could be huge?

rick merritt
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re: Slideshow: IBM outlines fab future beyond FinFETs
rick merritt   2/12/2013 5:35:41 PM
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I neglected to add this significant quote from Gary Patton: "At 7 nm you have no choice and have to go to triple or quad patterning, and I expect some of that will creep in at 10 nm as well."

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As data rates begin to move beyond 25 Gbps channels, new problems arise. Getting to 50 Gbps channels might not be possible with the traditional NRZ (2-level) signaling. PAM4 lets data rates double with only a small increase in channel bandwidth by sending two bits per symbol. But, it brings new measurement and analysis problems. Signal integrity sage Ransom Stephens will explain how PAM4 differs from NRZ and what to expect in design, measurement, and signal analysis.

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