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resistion
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re: ISSCC: ASML says EUV best option at 10nm
resistion   6/13/2013 5:24:54 AM
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The 2D feature resolution is still not beating 22 nm and roughness about 15% of that. Photon shot noise is not negligible anymore.

resistion
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re: ISSCC: ASML says EUV best option at 10nm
resistion   6/13/2013 5:02:45 AM
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The SPIE material is publicly available: http://www.asml.com/doclib/investor/presentations/2013/asml_20130228_EUV_presentation_SPIE_public.pdf

resistion
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re: ISSCC: ASML says EUV best option at 10nm
resistion   2/26/2013 2:10:53 AM
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SPIE Keynote from Intel showed EUV out at 10 nm (still in pilot), with only 193 nm extension being used for production at 2H 2015.

double-o-nothing
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re: ISSCC: ASML says EUV best option at 10nm
double-o-nothing   2/24/2013 1:24:48 AM
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SPIE Advanced Lithography this week is where the updates on lithography happen.

resistion
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re: ISSCC: ASML says EUV best option at 10nm
resistion   2/23/2013 10:26:30 PM
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Why did they present this at ISSCC? The conference is about circuits and designs, not about devices and processes, don't even mention lithography!

Diogenes53
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re: ISSCC: ASML says EUV best option at 10nm
Diogenes53   2/22/2013 1:53:04 AM
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Bring on angstroms! The horse died when the name was changed from soft x-ray projection lithography to EUV. Who says words don't matter.

de_la_rosa
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re: ISSCC: ASML says EUV best option at 10nm
de_la_rosa   2/21/2013 4:21:15 PM
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I wonder if those resolution results are representative for high throughput conditions. They are flogging a dead horse!

pica0
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re: ISSCC: ASML says EUV best option at 10nm
pica0   2/21/2013 2:05:32 PM
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Any energy consumption estimations?

InVT
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re: ISSCC: ASML says EUV best option at 10nm
InVT   2/20/2013 4:50:16 PM
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I'm guessing if they develop a pellicle process they are going to have to bring it up well above 60W.

resistion
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re: ISSCC: ASML says EUV best option at 10nm
resistion   2/20/2013 1:58:18 AM
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Bi-directional M1 is commonly practiced but not necessary. In fact, given EUV's inherent X-Y asymmetry, unidirectional will always be lithographically preferred.

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