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resistion
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re: Dual layer helps ReRAM reach mainstream capacity
resistion   2/27/2013 1:37:55 PM
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Looks like they just tried something familiar with p-n junction diodes as selectors. Other groups are moving beyond that I believe.

Empty Boxes
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re: Dual layer helps ReRAM reach mainstream capacity
Empty Boxes   3/11/2013 12:33:50 PM
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You said "See paper 12.1 from ISSCC 2013 proceedings: A 130.7 mm2 two-layer 32-Gbit ReRAM memory device in 24-nm technology by Tz-Yi Liu and Tian Hong Yan et al." I'd love to see it - can you point a link to a copy?

Peter Clarke
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re: Dual layer helps ReRAM reach mainstream capacity
Peter Clarke   4/5/2013 1:12:08 PM
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@Empty Boxes I don't believe the full proceedings are made available online for free. You would have go to a library. Or maybe ask for a copy of the paper from SanDisk or Toshiba

Peter Clarke
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re: Dual layer helps ReRAM reach mainstream capacity
Peter Clarke   4/5/2013 1:15:29 PM
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@Empty Boxes The alternative is to open an account with the IEEE and purchase the individual paper from IEEE Xplore at http://ieeexplore.ieee.org I think it might be about $50.



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