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rick merritt
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re: Intel to make 14-nm FPGAs for Altera
rick merritt   2/26/2013 2:03:06 PM
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You can bet Quaqlcomm and Nvidia won't be on the list...but maybe Apple, Cisco and...?

Garcia-Lasheras
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re: Intel to make 14-nm FPGAs for Altera
Garcia-Lasheras   2/26/2013 1:36:17 PM
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...and don't forget Tabula. Three different programmable logic devices companies are already using Intel foundry. It was hard to imagine that a couple of years ago.

Wilco1
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re: Intel to make 14-nm FPGAs for Altera
Wilco1   2/26/2013 1:25:41 PM
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Do you seriously believe Intel will fab ARM SoCs for all its competitors on its latest processes? That won't happen unless Intel spins off its expensive idling fabs, or if demand for x86 CPUs falls significantly.

junko.yoshida
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re: Intel to make 14-nm FPGAs for Altera
junko.yoshida   2/26/2013 1:05:39 PM
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So, first Achronix, then Altera!

Kresearch
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re: Intel to make 14-nm FPGAs for Altera
Kresearch   2/26/2013 8:03:25 AM
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It sounds a little step foreward for Intel. The tipping point comes when Intel gets foundry orders from Apple, Qualcomm or Nvidia. Let's wait and see then.

eewiz
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re: Intel to make 14-nm FPGAs for Altera
eewiz   2/26/2013 6:20:49 AM
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Interesting! So Intel is going into full fledged foundry business. Get the high end customers first and then aim for mid end and leave the low end for others. TSMC/GF got a thing to worry.

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michigan0 Sang Kim First, 28nm bulk is in volume manufacturing for several years by the major semiconductor companies but not 28nm FDSOI today yet. Why not? Simply because unlike 28nm bulk the LDD(Lightly Doped Drain) to minimize hot carrier generation can't be implemented in 28nm FDSOI. Furthermore, hot carrier reliability becomes worse with scaling, That is the major reason why 28nm FDSOI is not manufacturable today and will not be. Second, how can you suppress the leakage currents from such ultra short 7nm due to the short channel effects? How thin SOI thickness is required to prevent punch-through of un-dopped 7nm FDSOI? Possibly less than 4nm. Depositing such an ultra thin film less then 4nm filum uniformly and reliably over 12" wafers at the manufacturing line is extremely difficult or not even manufacturable. If not manufacturable, the 7nm FDSOI debate is over!Third, what happens when hot carriers are generated near the drain at normal operation of 7nm FDSOI? Electrons go to the positively biased drain with no harm but where the holes to go? The holes can't go to the substrate because of the thin BOX layer. Some holes may become trapped at the BOX layer causing Vt shift. However, the vast majority of holes drift through the the un-dopped SOI channel toward the N+Source,...
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