Breaking News
Comments
Newest First | Oldest First | Threaded View
DrQuine
User Rank
Author
re: Printed electronics harvest energy from waste heat
DrQuine   4/4/2013 12:28:44 AM
NO RATINGS
The "not in my backyard" syndrome typically keeps these power stations away from highly populated areas where the excess heat could be used to heat buildings. Next best is efficient energy extraction at every stage in the system (from steam to hot water to cold water).

zhgreader
User Rank
Author
re: Printed electronics harvest energy from waste heat
zhgreader   4/3/2013 1:08:26 PM
NO RATINGS
We have used the waste heat to rear fish, to supply central heating. however , its pity to waste those heat energy.

R Paul
User Rank
Author
re: Printed electronics harvest energy from waste heat
R Paul   4/2/2013 4:55:27 PM
NO RATINGS
I agree with the "no free lunch" dictum, however, there is also no sense in not availing one self to a low-cost lunch. Well aware that the intuitively obvious solution is not always viable, couldn't we take advantage of convection air currents swirling upward through the cooling towers to capture energy via wind turbines? Recognizing air flow reduction would lower cooling efficiencies, is there a middle ground where some portion of blatantly excess losses might be recaptured?

Consultofactus
User Rank
Author
re: Printed electronics harvest energy from waste heat
Consultofactus   4/2/2013 11:38:47 AM
NO RATINGS
The conversion of waste heat to usable power is easier said than done because of the "no free lunch clause" of thermodynamics. Besides, the idea of using TEGs to capture waste heat in generating station (silicon-germanium TEGs) is not new, and has not met with much economic success in the past due to the difficulty in economically producing vast amounts of of SiGe material (although there are dozens of other TE materials, most include one or more expensive/rare elements)...but I wish the professor good luck.

EREBUS0
User Rank
Author
re: Printed electronics harvest energy from waste heat
EREBUS0   4/1/2013 8:02:39 PM
NO RATINGS
I agree. The amount of wasted heat energy is staggering. A lot of our power generation wastes about 50% or more of the initial thermal energy. Even capturing a fraction of the waste would be a significant increase in power available. Just a thought.



Datasheets.com Parts Search

185 million searchable parts
(please enter a part number or hit search to begin)
Radio
LATEST ARCHIVED BROADCAST

What are the engineering and design challenges in creating successful IoT devices? These devices are usually small, resource-constrained electronics designed to sense, collect, send, and/or interpret data. Some of the devices need to be smart enough to act upon data in real time, 24/7. Specifically the guests will discuss sensors, security, and lessons from IoT deployments.

Brought to you by:

Most Recent Comments
michigan0
 
SteveHarris0
 
realjjj
 
SteveHarris0
 
SteveHarris0
 
VicVat
 
Les_Slater
 
SSDWEM
 
witeken
Most Recent Messages
9/25/2016
4:48:30 PM
michigan0 Sang Kim First, 28nm bulk is in volume manufacturing for several years by the major semiconductor companies but not 28nm FDSOI today yet. Why not? Simply because unlike 28nm bulk the LDD(Lightly Doped Drain) to minimize hot carrier generation can't be implemented in 28nm FDSOI. Furthermore, hot carrier reliability becomes worse with scaling, That is the major reason why 28nm FDSOI is not manufacturable today and will not be. Second, how can you suppress the leakage currents from such ultra short 7nm due to the short channel effects? How thin SOI thickness is required to prevent punch-through of un-dopped 7nm FDSOI? Possibly less than 4nm. Depositing such an ultra thin film less then 4nm filum uniformly and reliably over 12" wafers at the manufacturing line is extremely difficult or not even manufacturable. If not manufacturable, the 7nm FDSOI debate is over!Third, what happens when hot carriers are generated near the drain at normal operation of 7nm FDSOI? Electrons go to the positively biased drain with no harm but where the holes to go? The holes can't go to the substrate because of the thin BOX layer. Some holes may become trapped at the BOX layer causing Vt shift. However, the vast majority of holes drift through the the un-dopped SOI channel toward the N+Source,...
Like Us on Facebook
Special Video Section
Once the base layer of a design has been taped out, making ...
In this short video we show an LED light demo to ...
The LTC2380-24 is a versatile 24-bit SAR ADC that combines ...
In this short video we show an LED light demo to ...
02:46
Wireless Power enables applications where it is difficult ...
07:41
LEDs are being used in current luxury model automotive ...
With design sizes expected to increase by 5X through 2020, ...
01:48
Linear Technology’s LT8330 and LT8331, two Low Quiescent ...
The quality and reliability of Mill-Max's two-piece ...
LED lighting is an important feature in today’s and future ...
05:27
The LT8602 has two high voltage buck regulators with an ...
05:18
Silego Technology’s highly versatile Mixed-signal GreenPAK ...
The quality and reliability of Mill-Max's two-piece ...
01:34
Why the multicopter? It has every thing in it. 58 of ...
Security is important in all parts of the IoT chain, ...
Infineon explains their philosophy and why the multicopter ...
The LTC4282 Hot SwapTM controller allows a board to be ...
This video highlights the Zynq® UltraScale+™ MPSoC, and sho...
Homeowners may soon be able to store the energy generated ...
The LTC®6363 is a low power, low noise, fully differential ...