As Mike pointed out above, Chenming Hu did seminal work on both FinFETs (1999) and FD-SOI (2000) -- both of which, in his original papers, were based on SOI. He recently wrote about why SOI still has important advantages for fully-depleted devices, both planar (FD-SOI) and vertical "FinFET" See his piece at: http://www.advancedsubstratenews.com/2012/04/chenming-hu-soi-can-empower-new-transistors-to-10nm-and-beyond/
For those interested in the history of fully depleted devices, it is important to remember that all these guys really "stand on the shoulders of giants". For what eventually became known as FinFETs, the first reference is probably a Hitachi paper on what they called the "Delta" dating back to 1989: http://ieeexplore.ieee.org/xpl/login.jsp?tp=&arnumber=74182&url=http%3A%2F%2Fieeexplore.ieee.org%2Fxpls%2Fabs_all.jsp%3Farnumber%3D74182. A steady stream of fully-depleted papers from the worldwide research community followed from there.
The term "FD-SOI" appears to have been coined by JP Colinge in 1998 -- (see http://ieeexplore.ieee.org/xpl/login.jsp?tp=&arnumber=669511&url=http%3A%2F%2Fieeexplore.ieee.org%2Fxpls%2Fabs_all.jsp%3Farnumber%3D669511). JPC we went on to do important work on all flavors of fully-depleted fabrication, theory and applications (he received the IEEE Andrew Grove Award last year "For contributions to silicon-on-insulator devices and technology").
In 1983-4 Lim and Fossum in 1983-4 referred to "completely depleted SOI" and even before, Worley in 1980 advanced a "theory of the fully depleted SOS MOS transistor". (My thanks to D. Flandre at UCL, who is also one of those fully-depleted "giants", for pointing all this out to me last year.)
Even though I never had a chance to work with him. I have read many of his papers and book. including FINFET and latest BSIM book. Well deserved award.
With made in US hat.
We devloped all this in US, going to manufacture from Taiwan...
Great choice for the award! Amazingly, Dr. Hu also contributed to the development of FD-SOI, which ST and Thomas Skotnicki refined to the very efficient Ultra-Thin Body and Buried Oxide FD-SOI, a Faster, Simpler, and Cooler technology for nano-scale semiconductors.
(Full Disclosure: I work for STMicroelectronics and Thomas Skotnicki is a colleague.)
What are the engineering and design challenges in creating successful IoT devices? These devices are usually small, resource-constrained electronics designed to sense, collect, send, and/or interpret data. Some of the devices need to be smart enough to act upon data in real time, 24/7. Specifically the guests will discuss sensors, security, and lessons from IoT deployments.