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asic_pal
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re: Father of the FinFET lands Kaufman award
asic_pal   4/4/2013 6:24:58 PM
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Congratulation Mr. Hu, I am sure finFET helps us move fwd to further lower geometries.

Michael.Markowitz
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re: Father of the FinFET lands Kaufman award
Michael.Markowitz   4/4/2013 9:36:48 PM
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Great choice for the award! Amazingly, Dr. Hu also contributed to the development of FD-SOI, which ST and Thomas Skotnicki refined to the very efficient Ultra-Thin Body and Buried Oxide FD-SOI, a Faster, Simpler, and Cooler technology for nano-scale semiconductors. (Full Disclosure: I work for STMicroelectronics and Thomas Skotnicki is a colleague.)

US Made
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re: Father of the FinFET lands Kaufman award
US Made   4/5/2013 1:24:45 AM
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Even though I never had a chance to work with him. I have read many of his papers and book. including FINFET and latest BSIM book. Well deserved award. With made in US hat. We devloped all this in US, going to manufacture from Taiwan...

nicolas.mokhoff
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re: Father of the FinFET lands Kaufman award
nicolas.mokhoff   4/5/2013 4:22:06 PM
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Well deserved award! Also, good to see recognition of distinguished technologist be a member of prestigious academies in U.S., China and Taiwan, among others.

song-chou-1
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re: Father of the FinFET lands Kaufman award
song-chou-1   4/6/2013 3:03:56 AM
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Yes well deserved !

Adele.Hars
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re: Father of the FinFET lands Kaufman award
Adele.Hars   4/8/2013 4:06:28 PM
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As Mike pointed out above, Chenming Hu did seminal work on both FinFETs (1999) and FD-SOI (2000) -- both of which, in his original papers, were based on SOI. He recently wrote about why SOI still has important advantages for fully-depleted devices, both planar (FD-SOI) and vertical "FinFET" See his piece at: http://www.advancedsubstratenews.com/2012/04/chenming-hu-soi-can-empower-new-transistors-to-10nm-and-beyond/ For those interested in the history of fully depleted devices, it is important to remember that all these guys really "stand on the shoulders of giants". For what eventually became known as FinFETs, the first reference is probably a Hitachi paper on what they called the "Delta" dating back to 1989: http://ieeexplore.ieee.org/xpl/login.jsp?tp=&arnumber=74182&url=http%3A%2F%2Fieeexplore.ieee.org%2Fxpls%2Fabs_all.jsp%3Farnumber%3D74182. A steady stream of fully-depleted papers from the worldwide research community followed from there. The term "FD-SOI" appears to have been coined by JP Colinge in 1998 -- (see http://ieeexplore.ieee.org/xpl/login.jsp?tp=&arnumber=669511&url=http%3A%2F%2Fieeexplore.ieee.org%2Fxpls%2Fabs_all.jsp%3Farnumber%3D669511). JPC we went on to do important work on all flavors of fully-depleted fabrication, theory and applications (he received the IEEE Andrew Grove Award last year "For contributions to silicon-on-insulator devices and technology"). In 1983-4 Lim and Fossum in 1983-4 referred to "completely depleted SOI" and even before, Worley in 1980 advanced a "theory of the fully depleted SOS MOS transistor". (My thanks to D. Flandre at UCL, who is also one of those fully-depleted "giants", for pointing all this out to me last year.)

bsassani940
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re: Father of the FinFET lands Kaufman award
bsassani940   4/8/2013 9:08:05 PM
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Well Deserved! He was my professor in 1993 (UCB) and I am glad he has been appreciated for his great contribution.

Sharath666
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re: Father of the FinFET lands Kaufman award
Sharath666   4/11/2013 7:00:24 AM
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Congratulations, Dr. Hu. The contributions of people like you is what drives the industry and the nation forward.



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