Embedded Systems Conference
Breaking News
Comments
Newest First | Oldest First | Threaded View
Page 1 / 2   >   >>
double-o-nothing
User Rank
Author
re: SanDisk sees no EUV until ReRAM replaces flash
double-o-nothing   4/11/2013 9:00:18 AM
NO RATINGS
EUV essentially missed the window. To go to 10 nm and beyond, EUV is not any better than 193i.

resistion
User Rank
Author
re: SanDisk sees no EUV until ReRAM replaces flash
resistion   4/10/2013 2:20:44 AM
NO RATINGS
HDD companies been playing well with imprint recently, also recently adding DSA to rotary e-beam for the template fabrication.

Diogenes53
User Rank
Author
re: SanDisk sees no EUV until ReRAM replaces flash
Diogenes53   4/9/2013 10:43:10 PM
NO RATINGS
EUV, especially for NVM, is a giant head fake, orchestrated principally by Samsung. Their stated corporate strategy has always been to use their overwhelming presence and financial strength to club their competition to death, financially. EUV is, in theory, a perfect manifestation of that strategy. Imagine an NVM fab with, say, 10 EUV tools, at $100M each, running at 50WPH max. NVM is the most elastic of devices, chasing the Nirvana of Harddiskland, and cost is the barrier. The only technology with a chance of enabling NVM to threaten hard disks is imprint. And Toshiba has figured this out.

resistion
User Rank
Author
re: SanDisk sees no EUV until ReRAM replaces flash
resistion   4/9/2013 4:54:36 PM
NO RATINGS
Even with smaller diodes, I'd still think they would use their 1z process rather than EUV.

resistion
User Rank
Author
re: SanDisk sees no EUV until ReRAM replaces flash
resistion   4/9/2013 3:18:58 PM
NO RATINGS
My understanding from talking to someone at the company about why they thought ReRAM needed EUV is that they felt in the high-density array, the ReRAM element would need a selector, i.e., an isolation device like a diode, at every cross-line intersection. This is not so easy to do in the BICS architecture. To make up the cost difference, the diode-based architecture needs to make use of the smallest allowed design rules, much narrower than used for BICS. In turn, this architecture would use fewer levels than BICS. But already some groups are exploring eliminating this isolation device. If one of the approaches works, then the BICS architecture may be applied to the ReRAM.

resistion
User Rank
Author
re: SanDisk sees no EUV until ReRAM replaces flash
resistion   4/9/2013 3:01:41 PM
NO RATINGS
At this year's SPIE EUV conference, Zeiss added a couple more concerns regarding the larger angles needed for higher resolution ~10 nm. To compensate by increased demagnification would result in the need to either increase the mask substrate size or stitch together multiple exposures. Last year the shot noise issue was already brought up. Conventional diffraction limit eliminates longer wavelength single patterning, while quantum shot noise eliminates shorter wavelength single patterning (as the minimum dose eventually cooks the resist). Hence DSA was especially popular at this year's SPIE as a possible cheap multi-patterning solution.

jeremybirch
User Rank
Author
re: SanDisk sees no EUV until ReRAM replaces flash
jeremybirch   4/9/2013 2:54:56 PM
NO RATINGS
The wikipedia article on EUV (http://en.wikipedia.org/wiki/EUV) seems to imply that there are a lot of barriers to it succeeding. Not only is power way too low to get a high throughput (and the efficiency of the light source is shockingly low) but the high energy of the photons induces effects that reduce the sharpness of focus (eg secondary electrons are scattered into the resist hence exposing bits that are meant to be unexposed). It does not sound to me that EUV is viable on this basis. It is also implying that by the time EUV is deployed that even EUV might need double masking, which reduces its appeal still further. Does anyone know more about this?

resistion
User Rank
Author
re: SanDisk sees no EUV until ReRAM replaces flash
resistion   4/7/2013 4:46:49 PM
NO RATINGS
I don't know if building 3d structures 10 nm wide or smaller will be cheaper or even preferred practically or electrically. Toshiba's BICS uses ~60 nm wide 3d structures.

song-chou-1
User Rank
Author
re: SanDisk sees no EUV until ReRAM replaces flash
song-chou-1   4/6/2013 3:12:41 AM
NO RATINGS
I hear EUV not viable for logic either for at least next 5 years. Real Wafers processing per hour under manufacturing conditions is less than 10 for a ~100€ tool. To overcome shot noise EUV power needs to be significantly above 200W for logic.

Gil Russell
User Rank
Author
re: SanDisk sees no EUV until ReRAM replaces flash
Gil Russell   4/5/2013 8:32:32 PM
NO RATINGS
Curious that a technology story is fed from a CFO - a new reality first for the industry. Whatever happened to SanDisk's promised introduction in the 2H 2013? And isn't this a question for Toshiba where the real development is being done?

Page 1 / 2   >   >>


Radio
NEXT UPCOMING BROADCAST
Why Connect a Car?
May 11, 1pm EDT Monday
Overview: Battle-hardened veterans of the electronics industry have heard of the “connected car” so often that they assume it’s a done deal. But do we really know what it takes to get a car connected and what its future entails? Join EE Times editor Junko Yoshida as she moderates a panel of movers and shakers in the connected car business. Executives from Cisco, Siemens and NXP will share ideas, plans and hopes for connected cars and their future. After the first 30 minutes of the radio show, our listeners will have the opportunity to ask questions via live online chat.
Top Comments of the Week
Flash Poll
Like Us on Facebook

Datasheets.com Parts Search

185 million searchable parts
(please enter a part number or hit search to begin)
Special Video Section
LED lighting is an important feature in today’s and future ...
Active balancing of series connected battery stacks exists ...
After a four-year absence, Infineon returns to Mobile World ...
A laptop’s 65-watt adapter can be made 6 times smaller and ...
An industry network should have device and data security at ...
The LTC2975 is a four-channel PMBus Power System Manager ...
In this video, a new high speed CMOS output comparator ...
The LT8640 is a 42V, 5A synchronous step-down regulator ...
The LTC2000 high-speed DAC has low noise and excellent ...
How do you protect the load and ensure output continues to ...
General-purpose DACs have applications in instrumentation, ...
Linear Technology demonstrates its latest measurement ...
10:29
Demos from Maxim Integrated at Electronica 2014 show ...
Bosch CEO Stefan Finkbeiner shows off latest combo and ...
STMicroelectronics demoed this simple gesture control ...
Keysight shows you what signals lurk in real-time at 510MHz ...
TE Connectivity's clear-plastic, full-size model car shows ...
Why culture makes Linear Tech a winner.
Recently formed Architects of Modern Power consortium ...
Specially modified Corvette C7 Stingray responds to ex Indy ...