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resistion
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re: London Calling: ReRAM gets video treatment
resistion   4/6/2013 12:45:27 AM
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The 0.9 V is for read operation. It still needs 3V for write. Speed is 800 ms for write (target). Code storage is low endurance but Mb density, data is higher endurance but lower density.

Gil Russell
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re: London Calling: ReRAM gets video treatment
Gil Russell   4/6/2013 5:30:32 AM
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Peter, you missed Altis' CBRAM announcement too...,

Peter Clarke
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re: London Calling: ReRAM gets video treatment
Peter Clarke   4/8/2013 10:02:11 AM
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@Gil Russell Did I? If you mean this announcement http://www.eetimes.com/design/memory-design/4411095/Altis-upgrades-embedded-non-volatile-memory from April 2, then I did not. If you mean something else, then possibly I did.

Gil Russell
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re: London Calling: ReRAM gets video treatment
Gil Russell   4/8/2013 2:41:19 PM
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My apologies. Sometimes your valued contributions are overlooked. Noticed in your write-up the last part that you commented on: "..,full compatibility with standard manufacturing back-end-of-line flows, including robust data retention through the solder reflow process." said Narbeh Derhacobian, CEO of Adesto, in the same statement." A broadside on Phase Change from Narbeh - the high temperature experienced during reflow will erase it...,

GermanInTI
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re: London Calling: ReRAM gets video treatment
GermanInTI   4/9/2013 12:43:13 PM
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Good for the start, but too early for cheer. From years ago Fujitsu and TI is promoting FRAM MCU, non-volatile RAM, which reads and writes data at 1.8V with low power consumption. Actually Panasonic also has a very talented but too closed FRAM team beside ReRAM. Panasonic still needs much more time to be able to stably manufacture and be accepted by the market. You can write infinite with FRAM, But ReRAM will always have limited write cycle(100K) which is extremely unuseful for frequent logging applications. They say smart meters as target application in the video, with 100K write, forget it.

Peter Clarke
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re: London Calling: ReRAM gets video treatment
Peter Clarke   4/10/2013 11:06:49 AM
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@GermanInTI Thanks for your comment on FRAM MCU (Wolverine). However, I am not sure about ReRAM ALWAYS having limited write cycling. Some of the learned papers on metal-oxide ReRAM have shown extremely high cycling endurance. Samsung and KAIST reported on a tantalum-oxide bilayer structure (same as Panasonic) with 10^12 cycles endurance. http://www.eetimes.com/electronics-news/4217799/Samsung-trillion-cycle-ReRAM

resistion
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CEO
re: London Calling: ReRAM gets video treatment
resistion   4/10/2013 7:41:02 AM
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It is surprising why Panasonic wouldn't push their FRAM.



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