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resistion
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re: ST-MRAM gets practical
resistion   4/11/2013 8:05:59 PM
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I remember that piece, thanks. But what advantage toggle has over spin torque to stick with it is not clear.

Kristin Lewotsky
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re: ST-MRAM gets practical
Kristin Lewotsky   4/11/2013 4:37:43 PM
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My understanding is that it's first and foremost a question of different horses for different courses – toggle MRAM is best for some uses while ST-MRAM is best for others. I did a detailed write up on this work in early January reviewing operation, pros and cons, etc. You can find it at http://www.eetimes.com/design/memory-design/4404019/Tech-trends--Details-on-Everspin-s-ST-MRAM. Cheers, K

GermanInTI
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re: ST-MRAM gets practical
GermanInTI   4/11/2013 1:18:20 PM
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This should displace more FRAM. Buuuuuuut risky, If there will be a speaker designed near your MRAM. Speakers includes strong magnets inside. Will lose all your important data in MRAM... wow I still suggest FRAM solution more for non-volatile RAM needs. Many vendors also Fujitsu, TI, Cypress, Lapis, Panasonic...

resistion
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re: ST-MRAM gets practical
resistion   4/11/2013 8:53:14 AM
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So this should displace the older field-based MRAM technology?



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As data rates begin to move beyond 25 Gbps channels, new problems arise. Getting to 50 Gbps channels might not be possible with the traditional NRZ (2-level) signaling. PAM4 lets data rates double with only a small increase in channel bandwidth by sending two bits per symbol. But, it brings new measurement and analysis problems. Signal integrity sage Ransom Stephens will explain how PAM4 differs from NRZ and what to expect in design, measurement, and signal analysis.

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