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AD2010
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re: Samsung hits triple-level-cell NAND flash milestone
AD2010   5/2/2013 1:57:16 PM
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There are so many definitions for efficiency, so cannot comment on your number of 70% In any case, there is a strong possibility that the next 1X generation will be conventional floating gate with wrap around IPD and only after that 3D NAND will come.

resistion
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re: Samsung hits triple-level-cell NAND flash milestone
resistion   5/2/2013 12:42:32 PM
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75% area efficiency for 64 Gb at ~20 nm. Makes me think 3D NAND area efficiency degrades even further?

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