Breaking News
Comments
Newest First | Oldest First | Threaded View
Page 1 / 2   >   >>
resistion
User Rank
CEO
re: Samsung hits triple-level-cell NAND flash milestone
resistion   5/8/2013 5:54:47 AM
NO RATINGS
This point hits home when, in the SADP flow, the "spacer dep", "spacer etch" and "mandrel etch" were tagged as separate cost items in the cost stacks. If we applied this to 3D NAND specific process, we would have cost stacks 16 or 32 x higher!

resistion
User Rank
CEO
re: Samsung hits triple-level-cell NAND flash milestone
resistion   5/8/2013 12:50:41 AM
NO RATINGS
The processing of 8 or more cycles of device layers cannot be considered the same cost as a single cycle. There is multiplied material consumption as well as processing time. So this 3D cost-effectiveness thinking is self-deceit.

beinglass
User Rank
Rookie
re: Samsung hits triple-level-cell NAND flash milestone
beinglass   5/7/2013 10:50:20 PM
NO RATINGS
It is an amazing achievement by itself when you look at the SEM picture of a 64 bits wordline and triple level per cell. I think we have a tendency to overlook and take for granted this kind of technology marvel. Next step will be 3D with charge trapping cell where the channel is made out of poly. That will give a huge boost to the NAND density with a relaxed design rules

resistion
User Rank
CEO
re: Samsung hits triple-level-cell NAND flash milestone
resistion   5/6/2013 2:54:39 PM
NO RATINGS
It's a game of chicken among the four manufacturers. Who will go quadruple patterning with floating gate, and who will go 3D with charge-trapping. TLC is just to delay this fairly terrifying choice. It's a good topic for a betting pool.

AD2010
User Rank
Blogger
re: Samsung hits triple-level-cell NAND flash milestone
AD2010   5/6/2013 2:22:30 PM
NO RATINGS
Memory products have low margin of profit so using EUV is not the first option. In the future, NAND memory will go vertical and have 3D structures. 3D structures will have a relaxed pitch and the vertical integration will help increase the memory density.

AD2010
User Rank
Blogger
re: Samsung hits triple-level-cell NAND flash milestone
AD2010   5/6/2013 2:19:34 PM
NO RATINGS
“MLC to TLC is not doubling…” What matters for the storage is Mbit/ unit area. One method is to use Triple-Level- Cell and the other is to shrink the memory cell and have larger memory density. If error correction and stability can be guaranteed than TLC is a viable option for increasing the density. Of course the endurance is another topic.

resistion
User Rank
CEO
re: Samsung hits triple-level-cell NAND flash milestone
resistion   5/6/2013 1:21:49 AM
NO RATINGS
With MOSFETs requiring gate and gate oxide on sidewalls it is not likely there is enough room at ~10 nm hp or below.

Diogenes53
User Rank
Rookie
re: Samsung hits triple-level-cell NAND flash milestone
Diogenes53   5/5/2013 5:29:00 PM
NO RATINGS
Still no sign of EUV on anyone's horizon. When will multi-multi-multi-patterning become so onerous as to force a cheaper alternative?

double-o-nothing
User Rank
Rookie
re: Samsung hits triple-level-cell NAND flash milestone
double-o-nothing   5/5/2013 12:51:43 AM
NO RATINGS
From MLC to TLC is not doubling of density they need something like 14 nm instead.

KRS03
User Rank
Rookie
re: Samsung hits triple-level-cell NAND flash milestone
KRS03   5/2/2013 5:30:42 PM
NO RATINGS
Of course the concept goes back beyond Flash, there were multi-level EEPROM devices well over 10 years ago.

Page 1 / 2   >   >>


Flash Poll
EE Life
Frankenstein's Fix, Teardowns, Sideshows, Design Contests, Reader Content & More
Engineering Pop Culture!
Chuck Maggi, Engineering Manager

Two Cocky Techs Get Their Comeuppance
Chuck Maggi, Engineering Manager
Post a comment
Two swaggering technicians are dramatically humbled when they flip the power switch on a high-voltage simulator.

The Engineering Life - Around the Web
Dwight Bues, Systems Engineer

The Case of the Nonexistent Component
Dwight Bues, Systems Engineer
Post a comment
Every engineer has likely had the unfortunate experience of verifying a part's availability with a vendor, only to have the part ultimately wind up either not getting produced or ...

Engineer's Bookshelf
Caleb Kraft

The Martian: A Delightful Exploration of Math, Mars & Feces
Caleb Kraft
6 comments
To say that Andy Weir's The Martian is an exploration of math, Mars, and feces is a slight simplification. I doubt that the author would have any complaints, though.

Design Contests & Competitions
Caleb Kraft

Join The Balancing Act With April's Caption Contest
Caleb Kraft
58 comments
Sometimes it can feel like you're really performing in the big tent when presenting your hardware. This month's caption contest exemplifies this wonderfully.

Top Comments of the Week
Like Us on Facebook
EE Times on Twitter
EE Times Twitter Feed

Datasheets.com Parts Search

185 million searchable parts
(please enter a part number or hit search to begin)