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resistion
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re: SanDisk's 1Y flash stays at 19-nm
resistion   8/10/2013 3:18:20 AM
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And this last 1Z generation is not even double the density of the prior one 1Y. If it's going to be the final generation, at least make it look like one last hurrah or going out with a bang, like 10-13 nm, and get more of your money's worth.

resistion
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re: SanDisk's 1Y flash stays at 19-nm
resistion   8/10/2013 12:53:20 AM
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1z seems to be 16 nm apparently. I do wonder, why go beyond double patterning with any new patterning technique, just for one generation.

 

http://www.myce.com/news/toshiba-and-sandisk-build-new-fab-for-16-17nm-flash-memory-68369/

arno_x
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re: SanDisk's 1Y flash stays at 19-nm
arno_x   5/29/2013 11:53:12 AM
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So finally, a company is giving up shrinking. Intrinsic variability at small nodes is a well know problem, and the complications in litho does not help. The return back to 40 nm to get 3D devices is certainly a milestone.

resistion
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re: SanDisk's 1Y flash stays at 19-nm
resistion   5/28/2013 1:14:56 PM
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They will probably call 18 x 18 1Z. It's 13% area reduction.

resistion
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re: SanDisk's 1Y flash stays at 19-nm
resistion   5/28/2013 1:04:55 PM
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They mean half-pitch rather than cell size, I guess.



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As data rates begin to move beyond 25 Gbps channels, new problems arise. Getting to 50 Gbps channels might not be possible with the traditional NRZ (2-level) signaling. PAM4 lets data rates double with only a small increase in channel bandwidth by sending two bits per symbol. But, it brings new measurement and analysis problems. Signal integrity sage Ransom Stephens will explain how PAM4 differs from NRZ and what to expect in design, measurement, and signal analysis.

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