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resistion
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re: SanDisk's 1Y flash stays at 19-nm
resistion   5/28/2013 1:04:55 PM
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They mean half-pitch rather than cell size, I guess.

resistion
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re: SanDisk's 1Y flash stays at 19-nm
resistion   5/28/2013 1:14:56 PM
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They will probably call 18 x 18 1Z. It's 13% area reduction.

resistion
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re: SanDisk's 1Y flash stays at 19-nm
resistion   8/10/2013 12:53:20 AM
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1z seems to be 16 nm apparently. I do wonder, why go beyond double patterning with any new patterning technique, just for one generation.

 

http://www.myce.com/news/toshiba-and-sandisk-build-new-fab-for-16-17nm-flash-memory-68369/

resistion
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re: SanDisk's 1Y flash stays at 19-nm
resistion   8/10/2013 3:18:20 AM
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And this last 1Z generation is not even double the density of the prior one 1Y. If it's going to be the final generation, at least make it look like one last hurrah or going out with a bang, like 10-13 nm, and get more of your money's worth.

arno_x
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re: SanDisk's 1Y flash stays at 19-nm
arno_x   5/29/2013 11:53:12 AM
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So finally, a company is giving up shrinking. Intrinsic variability at small nodes is a well know problem, and the complications in litho does not help. The return back to 40 nm to get 3D devices is certainly a milestone.



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