Breaking News
Comments
Oldest First | Newest First | Threaded View
arno_x
User Rank
Author
re: Chipmakers turn to new process for sub-nm DRAM cells
arno_x   6/7/2013 10:53:31 PM
NO RATINGS
Nice article. Thanks.

resistion
User Rank
Author
re: Chipmakers turn to new process for sub-nm DRAM cells
resistion   6/8/2013 12:00:52 AM
NO RATINGS
Hi, last figure cannot be any clearer?

getty
User Rank
Author
re: Chipmakers turn to new process for sub-nm DRAM cells
getty   6/8/2013 6:08:10 AM
NO RATINGS
Dear Mr. Choe, Please email me. Jiyong Kim(hbt100@naver.com)

RedSoxRick
User Rank
Author
re: Chipmakers turn to new process for sub-nm DRAM cells
RedSoxRick   6/8/2013 3:09:45 PM
NO RATINGS
Buried Word Line: This reads like the Patented technology developed by Qimonda

Chipguy1
User Rank
Author
re: Chipmakers turn to new process for sub-nm DRAM cells
Chipguy1   6/8/2013 8:16:42 PM
NO RATINGS
With micron-elpida merger....world is down to just 3 DRAM players with 75% of the production in Korea. I suspect that might be the endpoint of consolidation and give Samsung an advantage in end devices.

resistion
User Rank
Author
re: Chipmakers turn to new process for sub-nm DRAM cells
resistion   6/9/2013 3:48:58 AM
NO RATINGS
Samsung 20 nm DRAM patterning still cost-effective enough, it seems. http://itersnews.com/?p=437

inventyan
User Rank
Author
re: Chipmakers turn to new process for sub-nm DRAM cells
inventyan   6/10/2013 3:12:03 PM
NO RATINGS
Cann't believe my multilayer (US Patent #6,407,435) is used in actual device now! A multilayer dielectric stack is provided which has alternating layers of a high-k material and an interposing material. The presence of the interposing material and the thinness of the high-k material layers reduces or eliminate effects of crystallization within the high-k material, even at relatively high annealing temperatures. The high-k dielectric layers are a metal oxide of preferably zirconium or hafnium. The interposing layers are preferably amorphous aluminum oxide, aluminum nitride, or silicon nitride. Because the layers reduce the effects of crystalline structures within individual layers, the overall tunneling current is reduced. Also provided are atomic layer deposition, sputtering, and evaporation as methods of depositing desired materials for forming the above-mentioned multilayer dielectric stack.

Phononscattering
User Rank
Author
re: Chipmakers turn to new process for sub-nm DRAM cells
Phononscattering   6/15/2013 10:05:04 PM
NO RATINGS
inventyan: The claims in your patent only mention this stack to be deposited on a semiconductor substrate, not a metal electrode, if I am not mistaken? There is also an important difference: The Material in the ZAZ stack is crystallized. The Al2O3 interlayer is not used to prevent crystallization. There was only a very short time when amorphous HAH or ZAZ stacks were used. Elpida and Micron did this in their 70-100nm products. They switched to crystalline stacks later.

Phononscattering
User Rank
Author
re: Chipmakers turn to new process for sub-nm DRAM cells
Phononscattering   6/15/2013 10:28:34 PM
NO RATINGS
The claims in your patent only mention this stack to be deposited on a semiconductor substrate, not a metal electrode, if I am not mistaken? There is also an important difference: The Material in the ZAZ stack is crystallized. The Al2O3 interlayer is not used to prevent crystallization. There was only a very short time when amorphous HAH or ZAZ stacks were used. Elpida and Micron did this in their 70-100nm products. They switched to crystalline stacks later.



Datasheets.com Parts Search

185 million searchable parts
(please enter a part number or hit search to begin)
Radio
LATEST ARCHIVED BROADCAST

What are the engineering and design challenges in creating successful IoT devices? These devices are usually small, resource-constrained electronics designed to sense, collect, send, and/or interpret data. Some of the devices need to be smart enough to act upon data in real time, 24/7. Specifically the guests will discuss sensors, security, and lessons from IoT deployments.

Brought to you by:

Most Recent Comments
resistion
 
David_Ashton_EC
 
Ron Neale
 
Alvie
 
resistion
 
David_Ashton_EC
 
David_Ashton_EC
 
Ian Johns
 
Alan Patterson
Like Us on Facebook
Special Video Section
The LTC2380-24 is a versatile 24-bit SAR ADC that combines ...
In this short video we show an LED light demo to ...
02:46
Wireless Power enables applications where it is difficult ...
07:41
LEDs are being used in current luxury model automotive ...
With design sizes expected to increase by 5X through 2020, ...
01:48
Linear Technology’s LT8330 and LT8331, two Low Quiescent ...
The quality and reliability of Mill-Max's two-piece ...
LED lighting is an important feature in today’s and future ...
05:27
The LT8602 has two high voltage buck regulators with an ...
05:18
Silego Technology’s highly versatile Mixed-signal GreenPAK ...
The quality and reliability of Mill-Max's two-piece ...
01:34
Why the multicopter? It has every thing in it. 58 of ...
Security is important in all parts of the IoT chain, ...
Infineon explains their philosophy and why the multicopter ...
The LTC4282 Hot SwapTM controller allows a board to be ...
This video highlights the Zynq® UltraScale+™ MPSoC, and sho...
Homeowners may soon be able to store the energy generated ...
The LTC®6363 is a low power, low noise, fully differential ...
See the Virtex® UltraScale+™ FPGA with 32.75G backplane ...
Vincent Ching, applications engineer at Avago Technologies, ...