Embedded Systems Conference
Breaking News
Comments
arno_x
User Rank
Author
re: Chipmakers turn to new process for sub-nm DRAM cells
arno_x   6/7/2013 10:53:31 PM
NO RATINGS
Nice article. Thanks.

resistion
User Rank
Author
re: Chipmakers turn to new process for sub-nm DRAM cells
resistion   6/8/2013 12:00:52 AM
NO RATINGS
Hi, last figure cannot be any clearer?

getty
User Rank
Author
re: Chipmakers turn to new process for sub-nm DRAM cells
getty   6/8/2013 6:08:10 AM
NO RATINGS
Dear Mr. Choe, Please email me. Jiyong Kim(hbt100@naver.com)

RedSoxRick
User Rank
Author
re: Chipmakers turn to new process for sub-nm DRAM cells
RedSoxRick   6/8/2013 3:09:45 PM
NO RATINGS
Buried Word Line: This reads like the Patented technology developed by Qimonda

Chipguy1
User Rank
Author
re: Chipmakers turn to new process for sub-nm DRAM cells
Chipguy1   6/8/2013 8:16:42 PM
NO RATINGS
With micron-elpida merger....world is down to just 3 DRAM players with 75% of the production in Korea. I suspect that might be the endpoint of consolidation and give Samsung an advantage in end devices.

resistion
User Rank
Author
re: Chipmakers turn to new process for sub-nm DRAM cells
resistion   6/9/2013 3:48:58 AM
NO RATINGS
Samsung 20 nm DRAM patterning still cost-effective enough, it seems. http://itersnews.com/?p=437

inventyan
User Rank
Author
re: Chipmakers turn to new process for sub-nm DRAM cells
inventyan   6/10/2013 3:12:03 PM
NO RATINGS
Cann't believe my multilayer (US Patent #6,407,435) is used in actual device now! A multilayer dielectric stack is provided which has alternating layers of a high-k material and an interposing material. The presence of the interposing material and the thinness of the high-k material layers reduces or eliminate effects of crystallization within the high-k material, even at relatively high annealing temperatures. The high-k dielectric layers are a metal oxide of preferably zirconium or hafnium. The interposing layers are preferably amorphous aluminum oxide, aluminum nitride, or silicon nitride. Because the layers reduce the effects of crystalline structures within individual layers, the overall tunneling current is reduced. Also provided are atomic layer deposition, sputtering, and evaporation as methods of depositing desired materials for forming the above-mentioned multilayer dielectric stack.

Phononscattering
User Rank
Author
re: Chipmakers turn to new process for sub-nm DRAM cells
Phononscattering   6/15/2013 10:28:34 PM
NO RATINGS
The claims in your patent only mention this stack to be deposited on a semiconductor substrate, not a metal electrode, if I am not mistaken? There is also an important difference: The Material in the ZAZ stack is crystallized. The Al2O3 interlayer is not used to prevent crystallization. There was only a very short time when amorphous HAH or ZAZ stacks were used. Elpida and Micron did this in their 70-100nm products. They switched to crystalline stacks later.

Phononscattering
User Rank
Author
re: Chipmakers turn to new process for sub-nm DRAM cells
Phononscattering   6/15/2013 10:05:04 PM
NO RATINGS
inventyan: The claims in your patent only mention this stack to be deposited on a semiconductor substrate, not a metal electrode, if I am not mistaken? There is also an important difference: The Material in the ZAZ stack is crystallized. The Al2O3 interlayer is not used to prevent crystallization. There was only a very short time when amorphous HAH or ZAZ stacks were used. Elpida and Micron did this in their 70-100nm products. They switched to crystalline stacks later.



Radio
NEXT UPCOMING BROADCAST

As we unveil EE Times’ 2015 Silicon 60 list, journalist & Silicon 60 researcher Peter Clarke hosts a conversation on startups in the electronics industry. Panelists Dan Armbrust (investment firm Silicon Catalyst), Andrew Kau (venture capital firm Walden International), and Stan Boland (successful serial entrepreneur, former CEO of Neul, Icera) join in the live debate.
Flash Poll
Top Comments of the Week
Like Us on Facebook

Datasheets.com Parts Search

185 million searchable parts
(please enter a part number or hit search to begin)
Special Video Section
The LTC®4015 is a complete synchronous buck controller/ ...
10:35
The LT®3042 is a high performance low dropout linear ...
Chwan-Jye Foo (C.J Foo), product marketing manager for ...
The LT®3752/LT3752-1 are current mode PWM controllers ...
LED lighting is an important feature in today’s and future ...
Active balancing of series connected battery stacks exists ...
After a four-year absence, Infineon returns to Mobile World ...
A laptop’s 65-watt adapter can be made 6 times smaller and ...
An industry network should have device and data security at ...
The LTC2975 is a four-channel PMBus Power System Manager ...
In this video, a new high speed CMOS output comparator ...
The LT8640 is a 42V, 5A synchronous step-down regulator ...
The LTC2000 high-speed DAC has low noise and excellent ...
How do you protect the load and ensure output continues to ...
General-purpose DACs have applications in instrumentation, ...
Linear Technology demonstrates its latest measurement ...
10:29
Demos from Maxim Integrated at Electronica 2014 show ...
Bosch CEO Stefan Finkbeiner shows off latest combo and ...
STMicroelectronics demoed this simple gesture control ...
Keysight shows you what signals lurk in real-time at 510MHz ...